STM8456 Todos los transistores

 

STM8456 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STM8456

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10.2 nS

Cossⓘ - Capacitancia de salida: 82 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm

Encapsulados: SO-8

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STM8456 datasheet

 ..1. Size:255K  samhop
stm8456.pdf pdf_icon

STM8456

STM8456 a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 33 @ VGS=10V 45 @ VGS=-10V 40V 6.2A -40V -5.3A 45 @ VGS=4.5V 70 @ VGS=-4.5V D2 5 4 G 2 6 3 D2 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TA=25 C unless otherwi

 8.1. Size:251K  samhop
stm8458.pdf pdf_icon

STM8456

STM8458 a S mHop Microelectronics C orp. Ver 1.0 Dual Enhancement Mode Field Effect Transistor ( N and P Channel ) PRODUCT SUMMARY (N-Channel) PRODUCT SUMMARY (P-Channel) RDS(ON) (m ) Max RDS(ON) (m ) Max VDSS ID VDSS ID 32 @ VGS=10V 48 @ VGS=-10V 40V 6.3A -40V -5.1A 42 @ VGS=4.5V 68 @ VGS=-4.5V D2 5 4 G 2 6 3 D2 S 2 D1 7 2 G 1 S O-8 D1 8 1 S 1 1 (TA=25 C unless otherwi

 8.2. Size:200K  samhop
stm8457.pdf pdf_icon

STM8456

Green Product STM8457 SamHop Microelectronics Corp. Dec.21,2009 Ver1.1 Dual Enhancement Mode Field Effect Transistor ( N and P Channel) (N-Channel) (P-Channel) PRODUCT SUMMARY PRODUCT SUMMARY VDSS ID RDS(ON) ( m ) Max VDSS ID RDS(ON) ( m ) Max 26 @ VGS = 10V 42 @ VGS = -10V -40V -5A 40V 6A 33 @ VGS = 4.5V 62 @ VGS = -4.5V D1 D1 D2 D2 8 7 6 5 SO-8 1 1 2 3 4 S1 G1 S2 G2

 8.3. Size:802K  samhop
stm8455.pdf pdf_icon

STM8456

S T M8455 S amHop Microelectronics C orp. Aug.16,2006 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) (N-C hannel) (P P R ODUC T S UMMAR Y P R ODUC T S UMMAR Y -C hannel) V DS S ID R DS (ON) ( m W ) Max V DS S ID R DS (ON) ( m W ) Max 29 @ VG S = 10V 42 @ V G S = -10V -40V -5A 40V 6A 40 @ V G S = 4.5V 62 @ V G S = -4.5V D1 D1 D2 D2 8 7 6 5 S O-8 1 1 2 3 4 S

Otros transistores... STS3419 , STS3417 , STS3415 , STS3414 , STM8501 , STM8500A , STM8458 , STM8457 , IRF1010E , STM6968 , STM6967 , STM6966 , STM6962 , STM6960A , STM4820 , STM4808 , STM4806 .

History: TN0106 | FDMS3604AS | FDMS5352

 

 

 


History: TN0106 | FDMS3604AS | FDMS5352

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