STM4639T Todos los transistores

 

STM4639T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STM4639T

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 24 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 768 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm

Encapsulados: SO-8

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STM4639T datasheet

 ..1. Size:108K  samhop
 stm4639t.pdf pdf_icon

STM4639T

Green Product STM4639T a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 12.5 @ VGS=-10V Suface Mount Package. -30V -10A 16.5 @ VGS=-4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S SO-8 D 8 1 S 1 ABSOLUTE MAXIMUM R

 7.1. Size:122K  samhop
 stm4639.pdf pdf_icon

STM4639T

Green Product STM4639 a S mHop Microelectronics C orp. Ver 2.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 8.5 @ VGS=-10V Suface Mount Package. -30V -14A 13 @ VGS=-4.5V ESD Procteced D 5 4 G 6 3 D S 7 2 D S SO- 8 D 8 1 S 1 ) ABSOLUTE MAXIMUM RA

 8.1. Size:157K  samhop
 stm4633.pdf pdf_icon

STM4639T

STM4633 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 33 @ VGS=-10V Suface Mount Package. -30V -7.0A 52 @ VGS=-4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S S O-8 D 8 1 S 1 (TA=25 C unless otherwise noted) AB

 8.2. Size:157K  samhop
 stm4637.pdf pdf_icon

STM4639T

STM4637 a S mHop Microelectronics C orp. Ver 1.1 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 30 @ VGS=-10V Suface Mount Package. -30V -7.7A 48 @ VGS=-4.5V ESD Protected. D 5 4 G D 6 3 S 7 2 D S S O-8 8 1 D S 1 (TA=25 C unless otherwise noted) A

MOSTRAR MÁS

Otros transistores... STM6967 , STM6966 , STM6962 , STM6960A , STM4820 , STM4808 , STM4806 , STM4800S , AO4407 , 2SK3098 , STG8820 , STG8810A , STG8810 , STG8211 , STF8233 , STF8220 , STF8211 .

History: KI2305DS | AP50T10AGI-HF

 

 

 


History: KI2305DS | AP50T10AGI-HF

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