SP8009 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SP8009
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.67 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 24 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 31 nC
   trⓘ - Tiempo de subida: 35 nS
   Cossⓘ - Capacitancia de salida: 382 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
   Paquete / Cubierta: TSON3.3X3.3

Búsqueda de reemplazo de MOSFET SP8009

SP8009 Datasheet (PDF)

..1. Size:80K samhop
sp8009.pdf

GreenProductSP8009aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.6.0 @ VGS=10VSuface Mount Package.30V 24A7.2 @ VGS=6V Pin 1TSON 3.3 x 3.3ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)SymbolP

0.1. Size:113K samhop
sp8009el.pdf

GreenProductSP8009ELaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.5.0 @ VGS=10VSuface Mount Package.33V 24A6.5 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAX

0.2. Size:114K samhop
sp8009e.pdf

GreenProductSP8009EaS mHop Microelectronics C orp.Ver 1.5N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.5.0 @ VGS=10VSuface Mount Package.33V 24A6.5 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAXI

9.1. Size:114K samhop
sp8006.pdf

GreenProductSP8006aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.4.5 @ VGS=4.5VSuface Mount Package.4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V ESD Protected.5.5 @ VGS=3.1V6.0 @ VGS=2.5VD 5 4 GD 6 3S7 2D

9.2. Size:115K samhop
sp8007.pdf

GreenProductSP8007aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.3.8 @ VGS=4.5VSuface Mount Package.3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V ESD Protected.5.1 @ VGS=3.1V5.9 @ VGS=2.5VD 5 4 GD 6 3S7 2D S

9.3. Size:115K samhop
sp8005.pdf

GreenProductSP8005aS mHop Microelectronics C orp.Ver 2.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.3.5 @ VGS=4.5VSuface Mount Package.3.7 @ VGS=4.0V 20V 32A 3.9 @ VGS=3.7V ESD Protected.4.3 @ VGS=3.1V5.0 @ VGS=2.5VD 5 4 GD 6 3S7 2D S

9.4. Size:112K samhop
sp8008.pdf

GreenProductSP8008aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.3.9 @ VGS=10VSuface Mount Package.30V 28A 4.2 @ VGS=4.5V ESD Protected.5.2 @ VGS=2.5V D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3

9.5. Size:770K huashuo
hsp8004.pdf

HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP8004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYPgate charge for most of the synchronous buck converter applications. I 175 A DThe HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

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