SP8009 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SP8009
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 1.67 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 24 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 382 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0072 Ohm
Тип корпуса: TSON3.3X3.3
SP8009 Datasheet (PDF)
sp8009.pdf
GreenProductSP8009aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.6.0 @ VGS=10VSuface Mount Package.30V 24A7.2 @ VGS=6V Pin 1TSON 3.3 x 3.3ABSOLUTE MAXIMUM RATINGS (TA=25C unless otherwise noted)SymbolP
sp8009el.pdf
GreenProductSP8009ELaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.5.0 @ VGS=10VSuface Mount Package.33V 24A6.5 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAX
sp8009e.pdf
GreenProductSP8009EaS mHop Microelectronics C orp.Ver 1.5N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.5.0 @ VGS=10VSuface Mount Package.33V 24A6.5 @ VGS=6V ESD Protected.D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3ABSOLUTE MAXI
sp8006.pdf
GreenProductSP8006aS mHop Microelectronics C orp.Ver 1.1N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.4.5 @ VGS=4.5VSuface Mount Package.4.7 @ VGS=4.0V 24V 12.5A 4.9 @ VGS=3.7V ESD Protected.5.5 @ VGS=3.1V6.0 @ VGS=2.5VD 5 4 GD 6 3S7 2D
sp8007.pdf
GreenProductSP8007aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.3.8 @ VGS=4.5VSuface Mount Package.3.9 @ VGS=4.0V 24V 27A 4.6 @ VGS=3.7V ESD Protected.5.1 @ VGS=3.1V5.9 @ VGS=2.5VD 5 4 GD 6 3S7 2D S
sp8005.pdf
GreenProductSP8005aS mHop Microelectronics C orp.Ver 2.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.3.5 @ VGS=4.5VSuface Mount Package.3.7 @ VGS=4.0V 20V 32A 3.9 @ VGS=3.7V ESD Protected.4.3 @ VGS=3.1V5.0 @ VGS=2.5VD 5 4 GD 6 3S7 2D S
sp8008.pdf
GreenProductSP8008aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.3.9 @ VGS=10VSuface Mount Package.30V 28A 4.2 @ VGS=4.5V ESD Protected.5.2 @ VGS=2.5V D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3
hsp8004.pdf
HSP8004 N-Ch 80V Fast Switching MOSFETs Description Product Summary V 80 V DSThe HSP8004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 3.1 m DS(ON),TYPgate charge for most of the synchronous buck converter applications. I 175 A DThe HSP8004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918