FDB86366F085 Todos los transistores

 

FDB86366F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDB86366F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 176 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 76 nS
   Cossⓘ - Capacitancia de salida: 1010 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: TO263 D2PAK
 

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FDB86366F085 Datasheet (PDF)

 6.1. Size:465K  fairchild semi
fdb86366 f085.pdf pdf_icon

FDB86366F085

December 2014FDB86366_F085N-Channel PowerTrench MOSFET80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A DD Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplications GS Automotive Engine ControlTO-263S PowerTrain ManagementFDB SERIES Solenoid and Motor Drivers In

 6.2. Size:436K  onsemi
fdb86366-f085.pdf pdf_icon

FDB86366F085

FDB86366-F085N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 mFeatures Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 ADD Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101GApplicationsGS Automotive Engine Control PowerTrain Management TO-263SFDB SERIES Solenoid and Motor Drivers Integrated Starter/A

 7.1. Size:365K  fairchild semi
fdb86360 f085.pdf pdf_icon

FDB86366F085

January 2014FDB86360_F085N-Channel Power Trench MOSFETDD80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80AGS UIS Capability RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchildwebsiteatwww.fairchildsemi.c

 7.2. Size:486K  fairchild semi
fdb86363 f085.pdf pdf_icon

FDB86366F085

June 2014FDB86363_F085N-Channel PowerTrench MOSFETDD80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability GS RoHS CompliantTO-263S Qualified to AEC Q101FDB SERIESApplications Forcurrentpackagedrawing,pleaserefertotheFairchild Automotive Engine Co

Otros transistores... SDF02N20 , SDD07N65 , FQA18N50V2 , FQA19N20C , FQA38N30 , FQB46N15 , FQI46N15 , FQP10N50CF , BS170 , FCH077N65FF085 , FCH190N65FF085 , FQT2P25 , FQU1N80 , FDC645N , SI3457DV , SSU1N50B , FDP070AN06A0 .

History: NP60N04VDK | SSP50R140SFD | IRF9Z34NSPBF

 

 
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