FDB86366F085 Datasheet. Specs and Replacement

Type Designator: FDB86366F085  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 176 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 76 nS

Cossⓘ - Output Capacitance: 1010 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: TO263 D2PAK

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FDB86366F085 substitution

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FDB86366F085 datasheet

 6.1. Size:465K  fairchild semi
 fdb86366 f085.pdf pdf_icon

FDB86366F085

December 2014 FDB86366_F085 N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control TO-263 S PowerTrain Management FDB SERIES Solenoid and Motor Drivers In... See More ⇒

 6.2. Size:436K  onsemi
 fdb86366-f085.pdf pdf_icon

FDB86366F085

FDB86366-F085 N-Channel PowerTrench MOSFET 80 V, 110 A, 3.6 m Features Typical RDS(on) = 2.8 m at VGS = 10V, ID = 80 A D D Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 G Applications G S Automotive Engine Control PowerTrain Management TO-263 S FDB SERIES Solenoid and Motor Drivers Integrated Starter/A... See More ⇒

 7.1. Size:365K  fairchild semi
 fdb86360 f085.pdf pdf_icon

FDB86366F085

January 2014 FDB86360_F085 N-Channel Power Trench MOSFET D D 80V, 110A, 1.8m Features Typ rDS(on) = 1.5m at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A G S UIS Capability RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild website at www.fairchildsemi.c... See More ⇒

 7.2. Size:486K  fairchild semi
 fdb86363 f085.pdf pdf_icon

FDB86366F085

June 2014 FDB86363_F085 N-Channel PowerTrench MOSFET D D 80 V, 110 A, 2.4 m Features Typical RDS(on) = 2.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 131 nC at VGS = 10V, ID = 80 A UIS Capability G S RoHS Compliant TO-263 S Qualified to AEC Q101 FDB SERIES Applications For current package drawing, please refer to the Fairchild Automotive Engine Co... See More ⇒

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Detailed specifications: SDF02N20, SDD07N65, FQA18N50V2, FQA19N20C, FQA38N30, FQB46N15, FQI46N15, FQP10N50CF, AOD4184A, FCH077N65FF085, FCH190N65FF085, FQT2P25, FQU1N80, FDC645N, SI3457DV, SSU1N50B, FDP070AN06A0

Keywords - FDB86366F085 MOSFET specs

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