FDT86256 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDT86256
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 1.7 nS
   Cossⓘ - Capacitancia de salida: 8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.845 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET FDT86256

FDT86256 Datasheet (PDF)

..1. Size:246K fairchild semi
fdt86256.pdf

August 2011FDT86256N-Channel PowerTrench MOSFET 150 V, 1.2 A, 845 mFeatures General Description Max rDS(on) = 845 m at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 1280 m at VGS = 6.0 V, ID = 1.0 A been especially tailored to minimize the on-state resistance and switchin

8.1. Size:233K fairchild semi
fdt86244.pdf

May 2011FDT86244N-Channel Power Trench MOSFET 150 V, 2.8 A, 128 mFeatures General Description Max rDS(on) = 128 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 178 m at VGS = 6 V, ID = 2.4 Abeen optimized for rDS(on), switching performance and High performance trench

8.2. Size:226K fairchild semi
fdt86246.pdf

December 2010FDT86246N-Channel Power Trench MOSFET 150 V, 2 A, 236 mFeatures General Description Max rDS(on) = 236 m at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 329 m at VGS = 6 V, ID = 1.7 Abeen optimized for rDS(on), switching performance and High performance trenc

8.3. Size:352K onsemi
fdt86244.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

8.4. Size:2063K kexin
fdt86244.pdf

SMD Type MOSFETN-Channel Enhancement MOSFET FDT86244Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 150V ID = 2.8 A (VGS = 10V) RDS(ON) 285m (VGS = 10V) RDS(ON) 305m (VGS = 6V) 1 2 3D0.2502.30 (typ)Gauge Plane1.GateG D S 2.Drain0.700.13.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Parameter

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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