FDT86256 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDT86256 datasheet

..1. Size:246K fairchild semi
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August 2011 FDT86256 N-Channel PowerTrench MOSFET 150 V, 1.2 A, 845 m Features General Description Max rDS(on) = 845 m at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1280 m at VGS = 6.0 V, ID = 1.0 A been especially tailored to minimize the on-state resistance and switchin

8.1. Size:233K fairchild semi
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May 2011 FDT86244 N-Channel Power Trench MOSFET 150 V, 2.8 A, 128 m Features General Description Max rDS(on) = 128 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 178 m at VGS = 6 V, ID = 2.4 A been optimized for rDS(on), switching performance and High performance trench

8.2. Size:226K fairchild semi
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December 2010 FDT86246 N-Channel Power Trench MOSFET 150 V, 2 A, 236 m Features General Description Max rDS(on) = 236 m at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 329 m at VGS = 6 V, ID = 1.7 A been optimized for rDS(on), switching performance and High performance trenc

8.3. Size:352K onsemi
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur