FDT86256 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

August 2011FDT86256N-Channel PowerTrench MOSFET 150 V, 1.2 A, 845 mFeatures General Description Max rDS(on) = 845 m at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 1280 m at VGS = 6.0 V, ID = 1.0 A been especially tailored to minimize the on-state resistance and switchin

May 2011FDT86244N-Channel Power Trench MOSFET 150 V, 2.8 A, 128 mFeatures General Description Max rDS(on) = 128 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 178 m at VGS = 6 V, ID = 2.4 Abeen optimized for rDS(on), switching performance and High performance trench

December 2010FDT86246N-Channel Power Trench MOSFET 150 V, 2 A, 236 mFeatures General Description Max rDS(on) = 236 m at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 329 m at VGS = 6 V, ID = 1.7 Abeen optimized for rDS(on), switching performance and High performance trenc

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

SMD Type MOSFETN-Channel Enhancement MOSFET FDT86244Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 150V ID = 2.8 A (VGS = 10V) RDS(ON) 285m (VGS = 10V) RDS(ON) 305m (VGS = 6V) 1 2 3D0.2502.30 (typ)Gauge Plane1.GateG D S 2.Drain0.700.13.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Parameter