FDT86256 PDF and Equivalents Search

August 2011 FDT86256 N-Channel PowerTrench MOSFET 150 V, 1.2 A, 845 m Features General Description Max rDS(on) = 845 m at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1280 m at VGS = 6.0 V, ID = 1.0 A been especially tailored to minimize the on-state resistance and switchin... See More ⇒

May 2011 FDT86244 N-Channel Power Trench MOSFET 150 V, 2.8 A, 128 m Features General Description Max rDS(on) = 128 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 178 m at VGS = 6 V, ID = 2.4 A been optimized for rDS(on), switching performance and High performance trench... See More ⇒

December 2010 FDT86246 N-Channel Power Trench MOSFET 150 V, 2 A, 236 m Features General Description Max rDS(on) = 236 m at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 329 m at VGS = 6 V, ID = 1.7 A been optimized for rDS(on), switching performance and High performance trenc... See More ⇒

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

SMD Type MOSFET N-Channel Enhancement MOSFET FDT86244 Unit mm SOT-223 6.50 0.2 3.00 0.1 Features 4 VDS (V) = 150V ID = 2.8 A (VGS = 10V) RDS(ON) 285m (VGS = 10V) RDS(ON) 305m (VGS = 6V) 1 2 3 D 0.250 2.30 (typ) Gauge Plane 1.Gate G D S 2.Drain 0.70 0.1 3.Source 4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25 Parameter... See More ⇒