FDT86256 Specs and Replacement
Type Designator: FDT86256
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 1.7 nS
Cossⓘ - Output Capacitance: 8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.845 Ohm
Package: SOT223
FDT86256 substitution
- MOSFET ⓘ Cross-Reference Search
FDT86256 datasheet
fdt86256.pdf
August 2011 FDT86256 N-Channel PowerTrench MOSFET 150 V, 1.2 A, 845 m Features General Description Max rDS(on) = 845 m at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1280 m at VGS = 6.0 V, ID = 1.0 A been especially tailored to minimize the on-state resistance and switchin... See More ⇒
fdt86244.pdf
May 2011 FDT86244 N-Channel Power Trench MOSFET 150 V, 2.8 A, 128 m Features General Description Max rDS(on) = 128 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 178 m at VGS = 6 V, ID = 2.4 A been optimized for rDS(on), switching performance and High performance trench... See More ⇒
fdt86246.pdf
December 2010 FDT86246 N-Channel Power Trench MOSFET 150 V, 2 A, 236 m Features General Description Max rDS(on) = 236 m at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 329 m at VGS = 6 V, ID = 1.7 A been optimized for rDS(on), switching performance and High performance trenc... See More ⇒
fdt86244.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FCPF11N60F, HUF76645SF085, FCPF20N60, FDS8672S, FDB045AN08F085, FQB10N50CFTM, FDD13AN06F085, FDMS039N08B, 2N7000, FDI045N10A, FDP045N10A, FDP150N10A, FDP020N06B, FDP027N08B, FDMA8884, FDC8878, FDC8884
Keywords - FDT86256 MOSFET specs
FDT86256 cross reference
FDT86256 equivalent finder
FDT86256 pdf lookup
FDT86256 substitution
FDT86256 replacement
Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRFH5220
🌐 : EN ES РУ
LIST
Last Update
MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E
Popular searches
2sd1047 transistor | mj802 | bu508a | bc560c | ksa1220ay | irf 830 | mpsa56 transistor | transistor 2222a
