FDT86256 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDT86256
Marking Code: 86256
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 1.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 1.2 nC
trⓘ - Rise Time: 1.7 nS
Cossⓘ - Output Capacitance: 8 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.845 Ohm
Package: SOT223
FDT86256 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDT86256 Datasheet (PDF)
fdt86256.pdf
August 2011FDT86256N-Channel PowerTrench MOSFET 150 V, 1.2 A, 845 mFeatures General Description Max rDS(on) = 845 m at VGS = 10 V, ID = 1.2 A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has Max rDS(on) = 1280 m at VGS = 6.0 V, ID = 1.0 A been especially tailored to minimize the on-state resistance and switchin
fdt86244.pdf
May 2011FDT86244N-Channel Power Trench MOSFET 150 V, 2.8 A, 128 mFeatures General Description Max rDS(on) = 128 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 178 m at VGS = 6 V, ID = 2.4 Abeen optimized for rDS(on), switching performance and High performance trench
fdt86246.pdf
December 2010FDT86246N-Channel Power Trench MOSFET 150 V, 2 A, 236 mFeatures General Description Max rDS(on) = 236 m at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 329 m at VGS = 6 V, ID = 1.7 Abeen optimized for rDS(on), switching performance and High performance trenc
fdt86244.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdt86244.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET FDT86244Unit:mmSOT-2236.500.23.000.1 Features4 VDS (V) = 150V ID = 2.8 A (VGS = 10V) RDS(ON) 285m (VGS = 10V) RDS(ON) 305m (VGS = 6V) 1 2 3D0.2502.30 (typ)Gauge Plane1.GateG D S 2.Drain0.700.13.Source4.60 (typ) 4.Drain Absolute Maximum Ratings Ta = 25Parameter
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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