FDP027N08B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDP027N08B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 246 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 137 nC
   trⓘ - Tiempo de subida: 66 nS
   Cossⓘ - Capacitancia de salida: 1670 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0027 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET FDP027N08B

FDP027N08B Datasheet (PDF)

..1. Size:661K fairchild semi
fdp027n08b.pdf

November 2013FDP027N08BN-Channel PowerTrench MOSFET80 V, 223 A, 2.7 mFeatures Description RDS(on) = 2.21 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- Low FOM RDS(on) * QGmize the on-state resistance while maintaining superior Low Reverse-Recovery Char

..2. Size:870K onsemi
fdp027n08b.pdf

FDP027N08BN-Channel PowerTrench MOSFET80 V, 223 A, 2.7 mDescriptionFeaturesThis N-Channel MOSFET is produced using ON Semicon- RDS(on) = 2.21 m ( Typ.) @ VGS = 10 V, ID = 100 Aductors PowerTrench process that has been tailored to mini- Low FOM RDS(on) * QGmize the on-state resistance while maintaining superior Low Reverse-Recovery Charge, Qrr = 112 nCs

9.1. Size:595K fairchild semi
fdp025n06.pdf

July 2008FDP025N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.5mFeatures General Description RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

9.2. Size:658K fairchild semi
fdp020n06b f102.pdf

January 2012FDP020N06B_F102N-Channel PowerTrench MOSFET 60V, 313A, 2mFeatures Description RDS(on) = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tailored Low FOM RDS(on) *QGto minimize the on-state resistance while maintaining superior switching performance

9.3. Size:638K fairchild semi
fdp023n08b.pdf

November 2013FDP023N08BN-Channel PowerTrench MOSFET75 V, 242 A, 2.35 mFeatures Description RDS(on) = 1.96 m ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on)*QGlored to minimize the on-state resistance while maintaining Low Reverse Recovery Charge

9.4. Size:668K fairchild semi
fdp020n06b.pdf

November 2013FDP020N06BN-Channel PowerTrench MOSFET60 V, 313 A, 2 mFeatures Description RDS(on) = 1.65 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Low FOM RDS(on) * QGlored to minimize the on-state resistance while maintainingsuperior switching performance.

9.5. Size:745K onsemi
fdp023n08b.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.6. Size:776K onsemi
fdp020n06b.pdf

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

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