Справочник MOSFET. FDP027N08B

 

FDP027N08B Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDP027N08B
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 246 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 80 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 66 ns
   Cossⓘ - Выходная емкость: 1670 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0027 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

FDP027N08B Datasheet (PDF)

 ..1. Size:661K  fairchild semi
fdp027n08b.pdfpdf_icon

FDP027N08B

November 2013FDP027N08BN-Channel PowerTrench MOSFET80 V, 223 A, 2.7 mFeatures Description RDS(on) = 2.21 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- Low FOM RDS(on) * QGmize the on-state resistance while maintaining superior Low Reverse-Recovery Char

 ..2. Size:870K  onsemi
fdp027n08b.pdfpdf_icon

FDP027N08B

FDP027N08BN-Channel PowerTrench MOSFET80 V, 223 A, 2.7 mDescriptionFeaturesThis N-Channel MOSFET is produced using ON Semicon- RDS(on) = 2.21 m ( Typ.) @ VGS = 10 V, ID = 100 Aductors PowerTrench process that has been tailored to mini- Low FOM RDS(on) * QGmize the on-state resistance while maintaining superior Low Reverse-Recovery Charge, Qrr = 112 nCs

 9.1. Size:595K  fairchild semi
fdp025n06.pdfpdf_icon

FDP027N08B

July 2008FDP025N06tmN-Channel PowerTrench MOSFET 60V, 265A, 2.5mFeatures General Description RDS(on) = 1.9m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process that has been Fast switching speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

 9.2. Size:658K  fairchild semi
fdp020n06b f102.pdfpdf_icon

FDP027N08B

January 2012FDP020N06B_F102N-Channel PowerTrench MOSFET 60V, 313A, 2mFeatures Description RDS(on) = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tailored Low FOM RDS(on) *QGto minimize the on-state resistance while maintaining superior switching performance

Другие MOSFET... FQB10N50CFTM , FDD13AN06F085 , FDMS039N08B , FDT86256 , FDI045N10A , FDP045N10A , FDP150N10A , FDP020N06B , AON7408 , FDMA8884 , FDC8878 , FDC8884 , FDZ661PZ , FDZ663P , FDMC86320 , FDD8424HF085A , FDMS86320 .

History: IRF7750 | RU1HL8L | IXTH10N60 | TSM4946DCS | UPA1770 | KRF7703 | SM1A02NSFP

 

 
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