FDMC86320 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC86320  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

|VGSth|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V

Qgⓘ - Carga de la puerta: 29 nC

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 353 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0117 Ohm

Encapsulados: MLP3.3X3.3

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FDMC86320 datasheet

 ..1. Size:492K  fairchild semi
 fdmc86320.pdf pdf_icon

FDMC86320

June 2014 FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or MSL1 robust

 6.1. Size:299K  fairchild semi
 fdmc86324.pdf pdf_icon

FDMC86320

May 2010 FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm

 7.1. Size:281K  fairchild semi
 fdmc86340et80.pdf pdf_icon

FDMC86320

January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench MOSFET 80 V, 68 A, 6.5 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10

 7.2. Size:241K  fairchild semi
 fdmc86340.pdf pdf_icon

FDMC86320

MOSTRAR MÁS

Otros transistores... FDP150N10A, FDP020N06B, FDP027N08B, FDMA8884, FDC8878, FDC8884, FDZ661PZ, FDZ663P, IRF1010E, FDD8424HF085A, FDMS86320, FDD5N60NZ, FDD7N60NZ, FDMS8020, FDU7N60NZTU, FCPF190N60, FDPF4N60NZ