FDMC86320 Todos los transistores

 

FDMC86320 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDMC86320
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 353 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0117 Ohm
   Paquete / Cubierta: MLP3.3X3.3
 

 Búsqueda de reemplazo de FDMC86320 MOSFET

   - Selección ⓘ de transistores por parámetros

 

FDMC86320 datasheet

 ..1. Size:492K  fairchild semi
fdmc86320.pdf pdf_icon

FDMC86320

June 2014 FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or MSL1 robust

 6.1. Size:299K  fairchild semi
fdmc86324.pdf pdf_icon

FDMC86320

May 2010 FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm

 7.1. Size:281K  fairchild semi
fdmc86340et80.pdf pdf_icon

FDMC86320

January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench MOSFET 80 V, 68 A, 6.5 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10

 7.2. Size:241K  fairchild semi
fdmc86340.pdf pdf_icon

FDMC86320

Otros transistores... FDP150N10A , FDP020N06B , FDP027N08B , FDMA8884 , FDC8878 , FDC8884 , FDZ661PZ , FDZ663P , IRF9540N , FDD8424HF085A , FDMS86320 , FDD5N60NZ , FDD7N60NZ , FDMS8020 , FDU7N60NZTU , FCPF190N60 , FDPF4N60NZ .

History: LP3401LT1G | APM4430 | 2SK2701A

 

 
Back to Top

 


 
.