FDMC86320 - аналоги, параметры транзистора - Справочник транзисторов

FDMC86320 даташит

..1. Size:492K fairchild semi
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June 2014 FDMC86320 N-Channel Power Trench MOSFET 80 V, 22 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.7 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 16 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or MSL1 robust

6.1. Size:299K fairchild semi
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May 2010 FDMC86324 N-Channel Power Trench MOSFET 80 V, 20 A, 23 m Features General Description Max rDS(on) = 23 m at VGS = 10 V, ID = 7 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 37 m at VGS = 6 V, ID = 4 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm

7.1. Size:281K fairchild semi
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January 2015 FDMC86340ET80 N-Channel Shielded Gate Power Trench MOSFET 80 V, 68 A, 6.5 m Features General Description Extended TJ rating to 175 C This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 6.5 m at VGS = 10

7.2. Size:241K fairchild semi
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