FDPF4N60NZ Todos los transistores

 

FDPF4N60NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPF4N60NZ
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 3.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 8.3 nC
   trⓘ - Tiempo de subida: 15.1 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.5 Ohm
   Paquete / Cubierta: TO220F

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FDPF4N60NZ Datasheet (PDF)

 ..1. Size:579K  fairchild semi
fdpf4n60nz.pdf

FDPF4N60NZ
FDPF4N60NZ

November 2013FDPF4N60NZN-Channel UniFETTM II MOSFET600 V, 3.8 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF)on

 ..2. Size:687K  onsemi
fdpf4n60nz.pdf

FDPF4N60NZ
FDPF4N60NZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:445K  fairchild semi
fdpf44n25trdtu.pdf

FDPF4N60NZ
FDPF4N60NZ

August 2014FDPF44N25TN-Channel UniFETTM MOSFET250 V, 44 A, 69 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 69 m (Max.) @ VGS = 10 V, ID = 22 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 47 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 60 pF)provi

 9.2. Size:363K  fairchild semi
fdpf44n25t.pdf

FDPF4N60NZ
FDPF4N60NZ

March 2009 TMUniFETFDP44N25 / FDPF44N25T250V N-Channel MOSFETFeatures Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 47 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 60 pF) stripe, DMOS technology. Fast switchingThis advanced technology

 9.3. Size:970K  onsemi
fdp4d5n10c fdpf4d5n10c.pdf

FDPF4N60NZ
FDPF4N60NZ

www.onsemi.comFDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.5 mFeatures General DescriptionThis N-Channel MV MOSFET is produced using ON Max rDS(on) = 4.5 m at VGS = 10 V, ID = 100 ASemiconductors advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrrincorporates Shielded Gate technology. This process has b

 9.4. Size:521K  onsemi
fdpf44n25t.pdf

FDPF4N60NZ
FDPF4N60NZ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.5. Size:255K  inchange semiconductor
fdpf4d5n10c.pdf

FDPF4N60NZ
FDPF4N60NZ

isc N-Channel MOSFET Transistor FDPF4D5N10CFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

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