November 2013FDPF4N60NZN-Channel UniFETTM II MOSFET600 V, 3.8 A, 2.5 Features Description RDS(on) = 1.9 (Typ.) @ VGS = 10 V, ID = 1.9 A UniFETTM II MOSFET is Fairchild Semiconductors high voltageMOSFET family based on advanced planar stripe and DMOS Low Gate Charge (Typ. 8.3 nC)technology. This advanced MOSFET family has the smallest Low Crss (Typ. 3.7 pF)on

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

August 2014FDPF44N25TN-Channel UniFETTM MOSFET250 V, 44 A, 69 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 69 m (Max.) @ VGS = 10 V, ID = 22 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 47 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 60 pF)provi

March 2009 TMUniFETFDP44N25 / FDPF44N25T250V N-Channel MOSFETFeatures Description 44A, 250V, RDS(on) = 0.069 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 47 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 60 pF) stripe, DMOS technology. Fast switchingThis advanced technology

www.onsemi.comFDP4D5N10C / FDPF4D5N10C N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.5 mFeatures General DescriptionThis N-Channel MV MOSFET is produced using ON Max rDS(on) = 4.5 m at VGS = 10 V, ID = 100 ASemiconductors advanced PowerTrench process that Extremely Low Reverse Recovery Charge, Qrrincorporates Shielded Gate technology. This process has b

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDPF4D5N10CFEATURESWith TO-220 packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL