FDMS8320L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS8320L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 36 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 2840 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0011 Ohm
   Paquete / Cubierta: PQFN5X6

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FDMS8320L Datasheet (PDF)

..1. Size:413K fairchild semi
fdms8320l.pdf

October 2014FDMS8320LN-Channel PowerTrench MOSFET 40 V, 100 A, 1.1 mFeatures General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 27 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa

..2. Size:478K onsemi
fdms8320l.pdf

FDMS8320LN-Channel PowerTrench MOSFETGeneral Description40 V, 248 A, 1.1 mThis N-Channel MOSFET has been designed specifically to Featuresimprove the overall efficiency and to minimize switch node Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized Max rDS(on)

0.1. Size:292K fairchild semi
fdms8320ldc.pdf

December 2014FDMS8320LDCN-Channel Dual CoolTM Power Trench MOSFET 40 V, 192 A, 1.1 mFeatures General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 44 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 37 A Semiconductors advanced Power Trench process.Advancements in both silicon and Dual CoolTM package Advanced Packa

8.1. Size:268K fairchild semi
fdms8350l.pdf

November 2014FDMS8350LN-Channel PowerTrench MOSFET 40 V, 200 A, 0.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 0.85 m at VGS = 10 V, ID = 47 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 Abeen especially tailored to minimize the on-state resistance and Advanc

8.2. Size:308K fairchild semi
fdms8333l.pdf

December 2014FDMS8333LN-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 mFeatures General Description Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 Aringing of DC/DC converters using either synchronous or Advanced P

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