All MOSFET. FDMS8320L Datasheet

 

FDMS8320L MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMS8320L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 36 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 121 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 2840 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: PQFN5X6

 FDMS8320L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMS8320L Datasheet (PDF)

 ..1. Size:413K  fairchild semi
 fdms8320l.pdf

FDMS8320L FDMS8320L

October 2014FDMS8320LN-Channel PowerTrench MOSFET 40 V, 100 A, 1.1 mFeatures General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 AThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 27 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Advanced Pa

 ..2. Size:478K  onsemi
 fdms8320l.pdf

FDMS8320L FDMS8320L

FDMS8320LN-Channel PowerTrench MOSFETGeneral Description40 V, 248 A, 1.1 mThis N-Channel MOSFET has been designed specifically to Featuresimprove the overall efficiency and to minimize switch node Max rDS(on) = 1.1 m at VGS = 10 V, ID = 32 A ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized Max rDS(on)

 0.1. Size:292K  fairchild semi
 fdms8320ldc.pdf

FDMS8320L FDMS8320L

December 2014FDMS8320LDCN-Channel Dual CoolTM Power Trench MOSFET 40 V, 192 A, 1.1 mFeatures General Description Max rDS(on) = 1.1 m at VGS = 10 V, ID = 44 AThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.5 m at VGS = 4.5 V, ID = 37 A Semiconductors advanced Power Trench process.Advancements in both silicon and Dual CoolTM package Advanced Packa

 8.1. Size:268K  fairchild semi
 fdms8350l.pdf

FDMS8320L FDMS8320L

November 2014FDMS8350LN-Channel PowerTrench MOSFET 40 V, 200 A, 0.85 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 0.85 m at VGS = 10 V, ID = 47 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 Abeen especially tailored to minimize the on-state resistance and Advanc

 8.2. Size:308K  fairchild semi
 fdms8333l.pdf

FDMS8320L FDMS8320L

December 2014FDMS8333LN-Channel PowerTrench MOSFET 40 V, 76 A, 3.1 mFeatures General Description Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 Aringing of DC/DC converters using either synchronous or Advanced P

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IRF9Z24N

 

 
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