FCPF190N60E Todos los transistores

 

FCPF190N60E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FCPF190N60E

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20.6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 1795 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm

Encapsulados: TO220F

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FCPF190N60E datasheet

 ..1. Size:641K  fairchild semi
fcp190n60e fcpf190n60e.pdf pdf_icon

FCPF190N60E

December 2013 FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 20.6 A, 190 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 160 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg

 ..2. Size:803K  onsemi
fcp190n60e fcpf190n60e.pdf pdf_icon

FCPF190N60E

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:201K  inchange semiconductor
fcpf190n60e.pdf pdf_icon

FCPF190N60E

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCPF190N60E FEATURES With TO-220F packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM

 4.1. Size:650K  fairchild semi
fcp190n60 fcpf190n60.pdf pdf_icon

FCPF190N60E

December 2013 FCP190N60 / FCPF190N60 N-Channel SuperFET II MOSFET 600 V, 20.2 A, 199 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

Otros transistores... FDMS8560S , FDMS8570S , FDMS3660S , FDMS3664S , FDMS3668S , FDMC8588 , FCP190N60E , FCP380N60E , 5N60 , FCPF380N60E , FDMS86310 , FDMS3006SDC , FDMS3008SDC , HUF75852G3F085 , FDMS3016DC , FDMS86101DC , FCP380N60 .

History: SP8009 | FDMS8558S

 

 

 


History: SP8009 | FDMS8558S

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