Справочник MOSFET. FCPF190N60E

 

FCPF190N60E MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FCPF190N60E
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 39 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 20.6 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 63 nC
   trⓘ - Время нарастания: 14 ns
   Cossⓘ - Выходная емкость: 1795 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
   Тип корпуса: TO220F

 Аналог (замена) для FCPF190N60E

 

 

FCPF190N60E Datasheet (PDF)

 ..1. Size:641K  fairchild semi
fcp190n60e fcpf190n60e.pdf

FCPF190N60E
FCPF190N60E

December 2013FCP190N60E / FCPF190N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 20.6 A, 190 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 160 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charg

 ..2. Size:803K  onsemi
fcp190n60e fcpf190n60e.pdf

FCPF190N60E
FCPF190N60E

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:201K  inchange semiconductor
fcpf190n60e.pdf

FCPF190N60E
FCPF190N60E

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCPF190N60EFEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

 4.1. Size:650K  fairchild semi
fcp190n60 fcpf190n60.pdf

FCPF190N60E
FCPF190N60E

December 2013FCP190N60 / FCPF190N60N-Channel SuperFET II MOSFET600 V, 20.2 A, 199 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 170 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 5

 4.2. Size:888K  onsemi
fcp190n60 fcpf190n60.pdf

FCPF190N60E
FCPF190N60E

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 4.3. Size:1195K  onsemi
fcpf190n60-f152.pdf

FCPF190N60E
FCPF190N60E

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 4.4. Size:248K  inchange semiconductor
fcpf190n60.pdf

FCPF190N60E
FCPF190N60E

isc N-Channel MOSFET Transistor FCPF190N60FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

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