HUF75344S3S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75344S3S 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 285 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
Encapsulados: TO263AB
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HUF75344S3S datasheet
huf75344a3.pdf
October 2007 HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8m Features Description RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A This N-channel power MOSFET is produced using Fairchild Semiconductor s innovative UItraFET process. This advanced RoHS compliant process technology achieves the lowest possible on-resistance per silicon area, resulting in outstan
huf75344g3 huf75344p3.pdf
HUF75344G3, HUF75344P3 Data Sheet October 2013 N-Channel UltraFET Power MOSFET Features 55 V, 75 A, 8 m 75A, 55V These N-Channel power MOSFETs are manufactured Simulation Models using the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABER process technology achieves the lowest possible on- Models resistance per silicon area, result
huf75344.pdf
HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 File Number 4402.7 75A, 55V, 0.008 Ohm, N-Channel UltraFET Features Power MOSFETs 75A, 55V These N-Channel power MOSFETs Simulation Models are manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. Models This advanced process technology - Thermal Impedance PSPICE and S
Otros transistores... HUF75339S3, HUF75339S3S, HUF75339S3ST, HUF75343G3, HUF75343P3, HUF75343S3S, HUF75344G3, HUF75344P3, 75N75, HUF75345G3, HUF75345P3, HUF75345S3S, HUF75545P3, HUF75545S3S, HUF75623P3, HUF75631P3, HUF75631SK8
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