HUF75344S3S
MOSFET. Datasheet pdf. Equivalent
Type Designator: HUF75344S3S
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 285
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 75
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 175
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008
Ohm
Package:
TO263AB
HUF75344S3S
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HUF75344S3S
Datasheet (PDF)
6.1. Size:430K fairchild semi
huf75344a3.pdf
October 2007HUF75344A3tmN-Channel UltraFET Power MOSFET55V, 75A, 8mFeatures Description RDS(on) = 6.5m ( Typ.)@ VGS = 10V, ID = 75A This N-channel power MOSFET is produced using FairchildSemiconductors innovative UItraFET process. This advanced RoHS compliantprocess technology achieves the lowest possibleon-resistance per silicon area, resulting in outstan
6.2. Size:380K onsemi
huf75344g3 huf75344p3.pdf
HUF75344G3, HUF75344P3Data Sheet October 2013N-Channel UltraFET Power MOSFET Features55 V, 75 A, 8 m 75A, 55VThese N-Channel power MOSFETs are manufactured Simulation Modelsusing the innovative UltraFET process. This advanced - Temperature Compensated PSPICE and SABERprocess technology achieves the lowest possible on-Modelsresistance per silicon area, result
6.3. Size:142K intersil
huf75344.pdf
HUF75344G3, HUF75344P3, HUF75344S3SData Sheet January 2000 File Number 4402.775A, 55V, 0.008 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 75A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the- Temperature Compensated PSPICE and SABERinnovative UltraFET process.ModelsThis advanced process technology- Thermal Impedance PSPICE and S
Datasheet: HUF75339S3
, HUF75339S3S
, HUF75339S3ST
, HUF75343G3
, HUF75343P3
, HUF75343S3S
, HUF75344G3
, HUF75344P3
, 10N65
, HUF75345G3
, HUF75345P3
, HUF75345S3S
, HUF75545P3
, HUF75545S3S
, HUF75623P3
, HUF75631P3
, HUF75631SK8
.