FCP380N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCP380N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 106 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 905 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
Encapsulados: TO220
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FCP380N60 datasheet
fcp380n60 fcpf380n60.pdf
November 2013 FCP380N60 / FCPF380N60 N-Channel SuperFET II MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 330 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 3
fcp380n60 fcpf380n60.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fcp380n60.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor FCP380N60 FEATURES With TO-220 packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications DC-DC converters Uninterruptible power supply ABSOLUTE MAXIMUM RATIN
fcp380n60e fcpf380n60e.pdf
November 2013 FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET 600 V, 10.2 A, 380 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charg
Otros transistores... FCPF190N60E , FCPF380N60E , FDMS86310 , FDMS3006SDC , FDMS3008SDC , HUF75852G3F085 , FDMS3016DC , FDMS86101DC , STF13NM60N , FCPF380N60 , FDMS3686S , FDMA8878 , FDMS86101A , FDPC8011S , HUF75639SF085A , FDMS3620S , FDMS86300DC .
History: BUZ172 | FDMS3626S
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