FCP380N60
MOSFET. Datasheet pdf. Equivalent
Type Designator: FCP380N60
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 106
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 10.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 30
nC
trⓘ - Rise Time: 7
nS
Cossⓘ -
Output Capacitance: 905
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38
Ohm
Package:
TO220
FCP380N60
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCP380N60
Datasheet (PDF)
..1. Size:637K fairchild semi
fcp380n60 fcpf380n60.pdf
November 2013FCP380N60 / FCPF380N60N-Channel SuperFET II MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 330 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 3
..2. Size:540K onsemi
fcp380n60 fcpf380n60.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..3. Size:206K inchange semiconductor
fcp380n60.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor FCP380N60FEATURESWith TO-220 packagingLow switching lossUltra low gate chargeEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsDC-DC convertersUninterruptible power supplyABSOLUTE MAXIMUM RATIN
0.1. Size:624K fairchild semi
fcp380n60e fcpf380n60e.pdf
November 2013FCP380N60E / FCPF380N60E N-Channel SuperFET II Easy-Drive MOSFET600 V, 10.2 A, 380 mFeatures Description 650 V @ TJ = 150C SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 320 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charg
0.2. Size:802K onsemi
fcp380n60e fcpf380n60e.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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