FCPF400N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCPF400N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 860 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Paquete / Cubierta: TO220F
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FCPF400N60 Datasheet (PDF)
fcpf400n60.pdf

December 2013FCPF400N60N-Channel SuperFET II MOSFET600 V, 10 A, 400 mFeatures Description 650 V @ TJ = 150CSuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 350 mcharge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 28 nC)and lo
fcpf400n60.pdf

isc N-Channel MOSFET Transistor FCPF400N60FEATURESWith TO-220F packagingDrain Source Voltage-: V 600VDSSStatic drain-source on-resistance:RDS(on) 400m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
fcpf400n80zl1.pdf

September 2014FCPF400N80ZL1N-Channel SuperFET II MOSFET 800 V, 11 A, 400 mFeatures Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductors brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 u
fcpf400n80z.pdf

November 2014FCPF400N80ZN-Channel SuperFET II MOSFET800 V, 11 A, 400 mFeatures Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductors brand-newhigh voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC)charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 uJ @ 400
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