FCPF400N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCPF400N60
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 860 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Encapsulados: TO220F
Búsqueda de reemplazo de FCPF400N60 MOSFET
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FCPF400N60 datasheet
fcpf400n60.pdf
December 2013 FCPF400N60 N-Channel SuperFET II MOSFET 600 V, 10 A, 400 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 350 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 28 nC) and lo
fcpf400n60.pdf
isc N-Channel MOSFET Transistor FCPF400N60 FEATURES With TO-220F packaging Drain Source Voltage- V 600V DSS Static drain-source on-resistance RDS(on) 400m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =2
fcpf400n80zl1.pdf
September 2014 FCPF400N80ZL1 N-Channel SuperFET II MOSFET 800 V, 11 A, 400 m Features Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 u
fcpf400n80z.pdf
November 2014 FCPF400N80Z N-Channel SuperFET II MOSFET 800 V, 11 A, 400 m Features Description Typ. RDS(on) = 340 m SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Ultra Low Gate Charge (Typ. Qg = 43 nC) charge balance technology for outstanding low on-resistance Low Eoss (Typ. 4.1 uJ @ 400
Otros transistores... FCPF380N60 , FDMS3686S , FDMA8878 , FDMS86101A , FDPC8011S , HUF75639SF085A , FDMS3620S , FDMS86300DC , IRF1405 , FDD86540 , FDMS015N04B , FDD390N15ALZ , FDMA7628 , FDMC86248 , FDPC8013S , FDP039N08B , FDME820NZT .
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