FDD86540 Todos los transistores

 

FDD86540 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD86540

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 127 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 50 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 1409 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0041 Ohm

Encapsulados: TO252

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FDD86540 datasheet

 ..1. Size:241K  fairchild semi
fdd86540.pdf pdf_icon

FDD86540

February 2012 FDD86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 m at VGS = 10 V, ID = 21.5 A improve the overall efficiency and to minimize switch node Max rDS(on) = 5 m at VGS = 8 V, ID = 19.5 A ringing of DC/DC converters using either synchronous or conventional

 ..2. Size:448K  onsemi
fdd86540.pdf pdf_icon

FDD86540

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:449K  onsemi
fdd86567-f085.pdf pdf_icon

FDD86540

FDD86567-F085 N-Channel PowerTrench MOSFET 60 V, 100 A, 3.2 m Features Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 A D Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant D Qualified to AEC Q101 G G Applications S Automotive Engine Control D-PAK TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

 8.2. Size:426K  onsemi
fdd86580-f085.pdf pdf_icon

FDD86540

FDD86580-F085 N-Channel PowerTrench MOSFET 60 V, 50 A, 10 m Features Typical RDS(on) = 7.8 m at VGS = 10V, ID = 50 A D Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS Capability RoHS Compliant D G Qualified to AEC Q101 G Applications S D-PAK Automotive Engine Control TO-252 S (TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering

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