Справочник MOSFET. FDD86540

 

FDD86540 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDD86540
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 127 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 50 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 65 nC
   trⓘ - Время нарастания: 15 ns
   Cossⓘ - Выходная емкость: 1409 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0041 Ohm
   Тип корпуса: TO252

 Аналог (замена) для FDD86540

 

 

FDD86540 Datasheet (PDF)

 ..1. Size:241K  fairchild semi
 fdd86540.pdf

FDD86540 FDD86540

February 2012FDD86540N-Channel PowerTrench MOSFET 60 V, 50 A, 4.1 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 4.1 m at VGS = 10 V, ID = 21.5 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 5 m at VGS = 8 V, ID = 19.5 Aringing of DC/DC converters using either synchronous or conventional

 ..2. Size:448K  onsemi
 fdd86540.pdf

FDD86540 FDD86540

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:449K  onsemi
 fdd86567-f085.pdf

FDD86540 FDD86540

FDD86567-F085N-Channel PowerTrench MOSFET 60 V, 100 A, 3.2 mFeatures Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 AD Typical Qg(tot) = 63 nC at VGS = 10V, ID = 80 A UIS Capability RoHS CompliantD Qualified to AEC Q101 GGApplicationsS Automotive Engine Control D-PAKTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Integrated Start

 8.2. Size:426K  onsemi
 fdd86580-f085.pdf

FDD86540 FDD86540

FDD86580-F085N-Channel PowerTrench MOSFET 60 V, 50 A, 10 mFeatures Typical RDS(on) = 7.8 m at VGS = 10V, ID = 50 AD Typical Qg(tot) = 20 nC at VGS = 10V, ID = 50 A UIS Capability RoHS CompliantDG Qualified to AEC Q101GApplicationsSD-PAK Automotive Engine ControlTO-252S(TO-252) PowerTrain Management Solenoid and Motor Drivers Electronic Steering

 8.3. Size:446K  onsemi
 fdd86569-f085.pdf

FDD86540 FDD86540

FDD86569-F085N-Channel PowerTrench MOSFET 60 V, 90 A, 5.7 mDFeatures Typical RDS(on) = 4.2 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 80 AD UIS Capability GG RoHS CompliantS Qualified to AEC Q101D-PAKTO-252Applications S(TO-252) Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starte

 8.4. Size:2426K  onsemi
 fdd86581-f085.pdf

FDD86540 FDD86540

FDD86581-F085N-Channel PowerTrench MOSFET60 V, 25 A, 15 mFeatures Typical RDS(on) = 12.3 m at VGS = 10V, ID = 25 A Typical Qg(tot) = 12.6 nC at VGS = 10V, ID = 25 AD UIS Capability RoHS Compliant Qualified to AEC Q101DGApplicationsG Automotive Engine ControlSD-PAK Powertrain ManagementTO-252S(TO-252) Solenoid and Motor Drivers Electronic Steeri

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