FDMS015N04B Todos los transistores

 ..1. Size:1373K  fairchild semi
 fdms015n04b.pdf

November 2013 FDMS015N04B N-Channel PowerTrench MOSFET 40 V, 100 A, 1.5 m Features Description RDS(on) = 1.13 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductor s advance PowerTrench process that has and High Efficiency been tailored to minimize the on-state resistance

 ..2. Size:780K  onsemi
 fdms015n04b.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:970K  1
 fdms039n08b.pdf

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 9.2. Size:1386K  fairchild semi
 fdms037n08b.pdf

November 2013 FDMS037N08B N-Channel PowerTrench MOSFET 75 V, 100 A, 3.7 m Features Description This N-Channel MOSFET is produced using Fairchild RDS(on) = 3.01 m (Typ.) @ VGS = 10 V, ID = 50 A Semiconductor s advance PowerTrench process that has Low FOM RDS(on)*QG been tailored to minimize the on-state resistance while main- Low Reverse Recovery Charge, Qrr = 80

 9.3. Size:288K  fairchild semi
 fdms0306as.pdf

January 2015 FDMS0306AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 m Features General Description The FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rD

 9.4. Size:454K  fairchild semi
 fdms0310s.pdf

January 2015 FDMS0310S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest Advan

 9.5. Size:1403K  fairchild semi
 fdms030n06b.pdf

November 2013 FDMS030N06B N-Channel PowerTrench MOSFET 60 V, 100 A, 3 m Features Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductor s advance PowerTrench process that has and High Efficiency been tailored to minimize the on-state resistance wh

 9.6. Size:270K  fairchild semi
 fdms0312s.pdf

January 2010 FDMS0312S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 m Features General Description The FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest

 9.7. Size:195K  fairchild semi
 fdms0308cs.pdf

August 2010 FDMS0308CS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Advanc

 9.8. Size:294K  fairchild semi
 fdms0308as.pdf

October 2014 FDMS0308AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 m Features General Description The FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rD

 9.9. Size:1367K  fairchild semi
 fdms039n08b.pdf

November 2013 FDMS039N08B N-Channel PowerTrench MOSFET 80 V, 100 A, 3.9 m Features Description RDS(on) = 3.2 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advance PowerTrench process that has been tailored Low FOM RDS(on) *QG to minimize the on-state resistance while maintaining superior Low Reverse Recovery

 9.10. Size:309K  fairchild semi
 fdms0309as.pdf

January 2015 FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 m Features General Description The FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 A package technologies have been combined to offer the lowest rD

 9.11. Size:272K  fairchild semi
 fdms0300s.pdf

October 2014 FDMS0300S N-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 m Features General Description The FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 A package technologies have been combined to offer the lowest

 9.12. Size:337K  fairchild semi
 fdms0310as.pdf

August 2014 FDMS0310AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest A

 9.13. Size:305K  fairchild semi
 fdms0312as.pdf

October 2014 FDMS0312AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest A

 9.14. Size:468K  fairchild semi
 fdms0302s.pdf

October 2014 FDMS0302S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 m Features General Description The FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest

 9.15. Size:402K  onsemi
 fdms0308as.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.16. Size:506K  onsemi
 fdms007n08lc.pdf

FDMS007N08LC N-Channel Shielded Gate POWERTRENCH) MOSFET 80 V, 84 A, 6.7 mW Description www.onsemi.com This N-Channel MV MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that VDS rDS(on) MAX ID MAX incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior 80 V 6.7 mW @ 10 V 84 A switchin