FDMS015N04B - описание и поиск аналогов

November 2013 FDMS015N04B N-Channel PowerTrench MOSFET 40 V, 100 A, 1.5 m Features Description RDS(on) = 1.13 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductor s advance PowerTrench process that has and High Efficiency been tailored to minimize the on-state resistance

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

November 2013 FDMS037N08B N-Channel PowerTrench MOSFET 75 V, 100 A, 3.7 m Features Description This N-Channel MOSFET is produced using Fairchild RDS(on) = 3.01 m (Typ.) @ VGS = 10 V, ID = 50 A Semiconductor s advance PowerTrench process that has Low FOM RDS(on)*QG been tailored to minimize the on-state resistance while main- Low Reverse Recovery Charge, Qrr = 80

January 2015 FDMS0306AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.4 m Features General Description The FDMS0306AS has been designed to minimize losses in Max rDS(on) = 2.4 m at VGS = 10 V, ID = 26 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest rD

January 2015 FDMS0310S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4 m Features General Description The FDMS0310S has been designed to minimize losses in Max rDS(on) = 4.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest Advan

November 2013 FDMS030N06B N-Channel PowerTrench MOSFET 60 V, 100 A, 3 m Features Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductor s advance PowerTrench process that has and High Efficiency been tailored to minimize the on-state resistance wh

January 2010 FDMS0312S N-Channel PowerTrench SyncFETTM 30 V, 42 A, 4.4 m Features General Description The FDMS0312S has been designed to minimize losses in Max rDS(on) = 4.4 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.8 m at VGS = 4.5 V, ID = 14 A package technologies have been combined to offer the lowest

August 2010 FDMS0308CS N-Channel PowerTrench SyncFETTM 30 V, 42 A, 3 m Features General Description The FDMS0308CS has been designed to minimize losses in Max rDS(on) = 3.0 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest Advanc

October 2014 FDMS0308AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 2.8 m Features General Description The FDMS0308AS has been designed to minimize losses in Max rDS(on) = 2.8 m at VGS = 10 V, ID = 24 A power conversion application. Advancements in both silicon and Max rDS(on) = 3.5 m at VGS = 4.5 V, ID = 21 A package technologies have been combined to offer the lowest rD

November 2013 FDMS039N08B N-Channel PowerTrench MOSFET 80 V, 100 A, 3.9 m Features Description RDS(on) = 3.2 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advance PowerTrench process that has been tailored Low FOM RDS(on) *QG to minimize the on-state resistance while maintaining superior Low Reverse Recovery

January 2015 FDMS0309AS N-Channel PowerTrench SyncFETTM 30 V, 49 A, 3.5 m Features General Description The FDMS0309AS has been designed to minimize losses in Max rDS(on) = 3.5 m at VGS = 10 V, ID = 21 A power conversion application. Advancements in both silicon and Max rDS(on) = 4.3 m at VGS = 4.5 V, ID = 19 A package technologies have been combined to offer the lowest rD

October 2014 FDMS0300S N-Channel PowerTrench SyncFET 30 V, 49 A, 1.8 m Features General Description The FDMS0300S has been designed to minimize losses in Max rDS(on) = 1.8 m at VGS = 10 V, ID = 30 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.0 m at VGS = 4.5 V, ID = 25 A package technologies have been combined to offer the lowest

August 2014 FDMS0310AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 4.3 m Features General Description The FDMS0310AS has been designed to minimize losses in Max rDS(on) = 4.3 m at VGS = 10 V, ID = 19 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.2 m at VGS = 4.5 V, ID = 17 A package technologies have been combined to offer the lowest A

October 2014 FDMS0312AS N-Channel PowerTrench SyncFETTM 30 V, 22 A, 5.0 m Features General Description The FDMS0312AS has been designed to minimize losses in Max rDS(on) = 5.0 m at VGS = 10 V, ID = 18 A power conversion application. Advancements in both silicon and Max rDS(on) = 6.2 m at VGS = 4.5 V, ID = 16 A package technologies have been combined to offer the lowest A

October 2014 FDMS0302S N-Channel PowerTrench SyncFETTM 30 V, 49 A, 1.9 m Features General Description The FDMS0302S has been designed to minimize losses in Max rDS(on) = 1.9 m at VGS = 10 V, ID = 28 A power conversion application. Advancements in both silicon and Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 23 A package technologies have been combined to offer the lowest

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS007N08LC N-Channel Shielded Gate POWERTRENCH) MOSFET 80 V, 84 A, 6.7 mW Description www.onsemi.com This N-Channel MV MOSFET is produced using ON Semiconductor s advanced POWERTRENCH process that VDS rDS(on) MAX ID MAX incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior 80 V 6.7 mW @ 10 V 84 A switchin