FDMC86248 Todos los transistores

 

FDMC86248 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC86248

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 36 W

Tensión drenaje-fuente (Vds): 150 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Resistencia drenaje-fuente RDS(on): 0.09 Ohm

Empaquetado / Estuche: PQFN3.3x3.3

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FDMC86248 Datasheet (PDF)

1.1. fdmc86248.pdf Size:256K _fairchild_semi

FDMC86248
FDMC86248

September 2012 FDMC86248 N-Channel Power Trench® MOSFET 150 V, 13 A, 90 mΩ Features General Description Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advance

2.1. fdmc86244.pdf Size:328K _fairchild_semi

FDMC86248
FDMC86248

October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m? Features General Description Max rDS(on) = 134 m? at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 186 m? at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Profile - 1

2.2. fdmc86240.pdf Size:315K _fairchild_semi

FDMC86248
FDMC86248

July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m? Features General Description Max rDS(on) = 51 m? at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 70 m? at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max

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