All MOSFET. FDMC86248 Datasheet

 

FDMC86248 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDMC86248
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 3.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.4 nC
   trⓘ - Rise Time: 1.4 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: PQFN3.3X3.3

 FDMC86248 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDMC86248 Datasheet (PDF)

 ..1. Size:256K  fairchild semi
 fdmc86248.pdf

FDMC86248 FDMC86248

September 2012FDMC86248N-Channel Power Trench MOSFET 150 V, 13 A, 90 mFeatures General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 Abeen especially tailored to minimize the on-state resistance and Advance

 6.1. Size:374K  1
 fdmc86244.pdf

FDMC86248 FDMC86248

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 6.2. Size:315K  fairchild semi
 fdmc86240.pdf

FDMC86248 FDMC86248

July 2010FDMC86240N-Channel Power Trench MOSFET 150 V, 16 A, 51 mFeatures General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 Abeen especially tailored to minimize the on-state resistance and Low Profile -

 6.3. Size:328K  fairchild semi
 fdmc86244.pdf

FDMC86248 FDMC86248

October 2010FDMC86244N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 mFeatures General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 Abeen especially tailored to minimize the on-state resistance and Low Pr

 6.4. Size:374K  onsemi
 fdmc86244.pdf

FDMC86248 FDMC86248

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI4874BDY | SI5499DC

 

 
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