FDMC86248 MOSFET Datasheet: N-Ch, 150V, 3.4A. Full specification with pinout and replacement list

FDMC86248 Specs and Replacement

Type Designator: FDMC86248

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.4 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: PQFN3.3X3.3

FDMC86248 substitution

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FDMC86248 datasheet

..1. Size:256K fairchild semi
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September 2012 FDMC86248 N-Channel Power Trench MOSFET 150 V, 13 A, 90 m Features General Description Max rDS(on) = 90 m at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 125 m at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advance... See More ⇒

6.1. Size:374K 1
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

6.2. Size:315K fairchild semi
fdmc86240.pdf pdf_icon

July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m Features General Description Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile -... See More ⇒

6.3. Size:328K fairchild semi
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October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m Features General Description Max rDS(on) = 134 m at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 186 m at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Pr... See More ⇒