FDMC86248 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDMC86248
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 36 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm
Package: PQFN3.3x3.3
FDMC86248 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDMC86248 Datasheet (PDF)
1.1. fdmc86248.pdf 
Size:256K _fairchild_semi
September 2012 FDMC86248 N-Channel Power Trench® MOSFET 150 V, 13 A, 90 mΩ Features General Description Max rDS(on) = 90 mΩ at VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has Max rDS(on) = 125 mΩ at VGS = 6 V, ID = 2.9 A been especially tailored to minimize the on-state resistance and Advance
2.1. fdmc86244.pdf Size:328K _fairchild_semi
October 2010 FDMC86244 N-Channel Power Trench MOSFET 150 V, 9.4 A, 134 m? Features General Description Max rDS(on) = 134 m? at VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 186 m? at VGS = 6 V, ID = 2.4 A been especially tailored to minimize the on-state resistance and Low Profile - 1
2.2. fdmc86240.pdf Size:315K _fairchild_semi
July 2010 FDMC86240 N-Channel Power Trench MOSFET 150 V, 16 A, 51 m? Features General Description Max rDS(on) = 51 m? at VGS = 10 V, ID = 4.6 A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 70 m? at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and Low Profile - 1 mm max
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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