FDMA3027PZ Todos los transistores

 

FDMA3027PZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMA3027PZ

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 3.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 59 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.087 Ohm

Encapsulados: MICROFET2X2

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FDMA3027PZ datasheet

 ..1. Size:300K  fairchild semi
fdma3027pz.pdf pdf_icon

FDMA3027PZ

June 2012 FDMA3027PZ Dual P-Channel PowerTrench MOSFET -30 V, -3.3 A, 87 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 87 m at VGS = -10 V, ID = -3.3 A for dual switching requirements such as gate driver for larger Max rDS(on) = 152 m at VGS = -4.5 V, ID = -2.3 A Mosfets. It features two independent P-Channel

 7.1. Size:324K  fairchild semi
fdma3023pz.pdf pdf_icon

FDMA3027PZ

December 2008 FDMA3023PZ tm Dual P-Channel PowerTrench MOSFET -30 V, -2.9 A, 90 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 A for the battery charge switch in cellular handset and other Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 A ultra-portable applications. It featu

 7.2. Size:292K  fairchild semi
fdma3028n.pdf pdf_icon

FDMA3027PZ

June 2011 FDMA3028N Dual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 m Features General Description This device is designed specifically as a single package solution Max rDS(on) = 68 m at VGS = 4.5 V, ID = 3.8 A for dual switching requirements in cellular handset and other Max rDS(on) = 88 m at VGS = 2.5 V, ID = 3.4 A ultra-portable applications. It features two independe

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