FDMA3027PZ Datasheet and Replacement
Type Designator: FDMA3027PZ
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 3.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 59 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.087 Ohm
Package: MICROFET2X2
FDMA3027PZ substitution
FDMA3027PZ Datasheet (PDF)
fdma3027pz.pdf

June 2012FDMA3027PZDual P-Channel PowerTrench MOSFET -30 V, -3.3 A, 87 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 87 m at VGS = -10 V, ID = -3.3 Afor dual switching requirements such as gate driver for larger Max rDS(on) = 152 m at VGS = -4.5 V, ID = -2.3 AMosfets. It features two independent P-Channel
fdma3023pz.pdf

December 2008FDMA3023PZtmDual P-Channel PowerTrench MOSFET -30 V, -2.9 A, 90 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 90 m at VGS = -4.5 V, ID = -2.9 Afor the battery charge switch in cellular handset and other Max rDS(on) = 130 m at VGS = -2.5 V, ID = -2.6 Aultra-portable applications. It featu
fdma3028n.pdf

June 2011FDMA3028NDual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 mFeatures General DescriptionThis device is designed specifically as a single package solution Max rDS(on) = 68 m at VGS = 4.5 V, ID = 3.8 Afor dual switching requirements in cellular handset and other Max rDS(on) = 88 m at VGS = 2.5 V, ID = 3.4 Aultra-portable applications. It features two independe
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: NTD4904N
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History: NTD4904N



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