HUF75545P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75545P3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 270 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET HUF75545P3
HUF75545P3 Datasheet (PDF)
huf75545p3 huf75545s3 huf75545s3s.pdf
HUF75545P3, HUF75545S3, HUF75545S3SData Sheet September 200275A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABDRAINFeaturesSOURCE (FLANGE)DRAINGATE Ultra Low On-Resistance- rDS(ON) = 0.010, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER DRAINElectrical Models (FLANG
huf75545p3 huf75545s3s.pdf
HUF75545P3, HUF75545S3SData Sheet October 2013N-Channel UltraFET Power MOSFET80 V, 75 A, 10 mFeaturesPackaging Ultra Low On-Resistance- rDS(ON) = 0.010, VGS = 10VJEDEC TO-220AB JEDEC TO-263ABDRAIN Simulation ModelsSOURCE (FLANGE)DRAIN- Temperature Compensated PSPICE and SABERGATEElectrical ModelsGATE- Spice and SABER Thermal Impedance Models
huf75545s3 huf75545s3st.pdf
HUF75545P3, HUF75545S3, HUF75545S3SData Sheet September 200275A, 80V, 0.010 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABDRAINFeaturesSOURCE (FLANGE)DRAINGATE Ultra Low On-Resistance- rDS(ON) = 0.010, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER DRAINElectrical Models (FLANG
huf75542p3-s3s.pdf
HUF75542P3, HUF75542S3SData Sheet December 200175A, 80V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAIN Ultra Low On-ResistanceGATE- rDS(ON) = 0.014, VGS = 10V Simulation ModelsGATE- Temperature Compensated PSPICE and SABER SOURCEElectrical ModelsDRAIN- Spice and SABER Thermal Impedance Model
huf75531sk8t.pdf
HUF75531SK8Data Sheet December 20016A, 80V, 0.030 Ohm, N-Channel,UltraFET Power MOSFETPackagingJEDEC MS-012AAFeaturesBRANDING DASH Ultra Low On-Resistance- rDS(ON) = 0.030, VGS = 10V Simulation Models5- Temperature Compensated PSPICE and SABER 1 Electrical Models23 - Spice and SABER Thermal Impedance Models4- www.fairchildsemi.com Peak Curren
Otros transistores... HUF75343P3 , HUF75343S3S , HUF75344G3 , HUF75344P3 , HUF75344S3S , HUF75345G3 , HUF75345P3 , HUF75345S3S , AON6380 , HUF75545S3S , HUF75623P3 , HUF75631P3 , HUF75631SK8 , HUF75637P3 , HUF75637S3S , HUF75639G3 , HUF75639P3 .
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