FDB9403F085 Todos los transistores

 

FDB9403F085 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDB9403F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 333 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 110 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19.5 nS

Cossⓘ - Capacitancia de salida: 3195 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0012 Ohm

Encapsulados: TO263 D2PAK

 Búsqueda de reemplazo de FDB9403F085 MOSFET

- Selecciónⓘ de transistores por parámetros

 

FDB9403F085 datasheet

 7.1. Size:485K  fairchild semi
fdb9403 f085.pdf pdf_icon

FDB9403F085

Aug 2012 FDB9403_F085 N-Channel Power Trench MOSFET 40V, 110A, 1.2m D D Features Typ rDS(on) = 1m at VGS = 10V, ID = 80A Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263AB S FDB SERIES Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering

 7.2. Size:447K  onsemi
fdb9403l-f085.pdf pdf_icon

FDB9403F085

FDB9403L-F085 N-Channel Logic Level PowerTrench MOSFET D D 40 V, 110 A, 1.2 m Features Typical RDS(on) = 1.0 m at VGS = 10V, ID = 80 A G Typical Qg(tot) = 186 nC at VGS = 10V, ID = 80 A G S UIS Capability TO-263 RoHS Compliant S FDB SERIES Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integr

 7.3. Size:340K  onsemi
fdb9403-f085.pdf pdf_icon

FDB9403F085

FDB9403-F085 N-Channel Power Trench MOSFET D D 40V, 110A, 1.2m Features Typ rDS(on) = 1m at VGS = 10V, ID = 80A G Typ Qg(tot) = 164nC at VGS = 10V, ID = 80A G S UIS Capability TO-263AB S RoHS Compliant FDB SERIES Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrate

 7.4. Size:288K  inchange semiconductor
fdb9403.pdf pdf_icon

FDB9403F085

isc N-Channel MOSFET Transistor FDB9403 FEATURES Drain Current I =93A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

Otros transistores... FDMS86150 , FDMC89521L , FDMQ86530L , FDB035AN06F085 , FCP260N60E , FCPF260N60E , FCU900N60Z , FDMC7208S , IRF640 , FCP600N60Z , FCPF600N60Z , FDT1600N10ALZ , FDMC86012 , FDMC86520DC , FDMS037N08B , FDP032N08B , FDB3632F085 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E | ASB65R120EFD | ASB60R150E | ASA80R900E | ASA80R750E | ASA80R290E | ASA70R950E | ASA70R600E | ASA70R380E | ASA70R240E | ASA65R850E | ASA65R550E | ASA65R350E

 

 

 

Popular searches

2sb56 | 2sc1451 datasheet | 2sc373 | a1023 datasheet | 2sc1080 | 2sb618 | 2sc1328 | 2sc1845 transistor

 

 

↑ Back to Top
.