Справочник MOSFET. FDB9403F085

 

FDB9403F085 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: FDB9403F085
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 333 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 110 A
   Tjⓘ - Максимальная температура канала: 175 °C
   trⓘ - Время нарастания: 19.5 ns
   Cossⓘ - Выходная емкость: 3195 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0012 Ohm
   Тип корпуса: TO263 D2PAK

 Аналог (замена) для FDB9403F085

 

 

FDB9403F085 Datasheet (PDF)

 7.1. Size:485K  fairchild semi
fdb9403 f085.pdf

FDB9403F085
FDB9403F085

Aug2012FDB9403_F085N-Channel Power Trench MOSFET40V, 110A, 1.2mDDFeatures Typ rDS(on) = 1m at VGS = 10V, ID = 80A Typ Qg(tot) = 164nC at VGS = 10V, ID = 80AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263ABSFDB SERIESApplications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering

 7.2. Size:447K  onsemi
fdb9403l-f085.pdf

FDB9403F085
FDB9403F085

FDB9403L-F085N-Channel Logic Level PowerTrench MOSFET DD40 V, 110 A, 1.2 mFeatures Typical RDS(on) = 1.0 m at VGS = 10V, ID = 80 AG Typical Qg(tot) = 186 nC at VGS = 10V, ID = 80 AGS UIS CapabilityTO-263 RoHS CompliantSFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integr

 7.3. Size:340K  onsemi
fdb9403-f085.pdf

FDB9403F085
FDB9403F085

FDB9403-F085N-Channel Power Trench MOSFET DD40V, 110A, 1.2m Features Typ rDS(on) = 1m at VGS = 10V, ID = 80AG Typ Qg(tot) = 164nC at VGS = 10V, ID = 80AGS UIS CapabilityTO-263ABS RoHS CompliantFDB SERIES Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Steering Integrate

 7.4. Size:288K  inchange semiconductor
fdb9403.pdf

FDB9403F085
FDB9403F085

isc N-Channel MOSFET Transistor FDB9403FEATURESDrain Current : I =93A@ T =25D CDrain Source Voltage: V =30V(Min)DSSStatic Drain-Source On-Resistance: R =5.7m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

 7.5. Size:287K  inchange semiconductor
fdb9403l.pdf

FDB9403F085
FDB9403F085

isc N-Channel MOSFET Transistor FDB9403LFEATURESDrain Current : I =110A@ T =25D CDrain Source Voltage: V =40V(Min)DSSStatic Drain-Source On-Resistance: R =1.2m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

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