FDMC86520DC Todos los transistores

 

FDMC86520DC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMC86520DC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 73 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 40 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Resistencia drenaje-fuente RDS(on): 0.0063 Ohm

Empaquetado / Estuche: PQFN3.3x3.3

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FDMC86520DC Datasheet (PDF)

1.1. fdmc86520l.pdf Size:269K _fairchild_semi

FDMC86520DC
FDMC86520DC

August 2011 FDMC86520L N-Channel Power Trench® MOSFET 60 V, 22 A, 7.9 mΩ Features General Description Max rDS(on) = 7.9 mΩ at VGS = 10 V, ID = 13.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or Low P

1.2. fdmc86520dc.pdf Size:277K _fairchild_semi

FDMC86520DC
FDMC86520DC

September 2012 FDMC86520DC N-Channel Dual CoolTM PowerTrench® MOSFET 60 V, 40 A, 6.3 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 6.3 mΩ at VGS = 10 V, ID = 17 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 mΩ

 3.1. fdmc86570let60.pdf Size:283K _upd-mosfet

FDMC86520DC
FDMC86520DC

January 2015 FDMC86570LET60 N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 87 A, 4.3 mΩ Features General Description Extended TJ rating to 175°C This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Shielded Gate MOSFET Technology incorporates Shielded Gate technology. This process has been Max rDS(on) = 4.3 mΩ at VGS = 10

3.2. fdmc86570l.pdf Size:373K _fairchild_semi

FDMC86520DC
FDMC86520DC

May 2013 FDMC86570L N-Channel Shielded Gate PowerTrench® MOSFET 60 V, 56 A, 4.3 mΩ Features Shielded Gate MOSFET Technology General Description Max rDS(on) = 4.3 mΩ at VGS = 10 V, ID = 18 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 15 A incorporates Shielded Gate technolo

 3.3. fdmc8651.pdf Size:300K _fairchild_semi

FDMC86520DC
FDMC86520DC

July 2008 FDMC8651 N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 m? Features General Description Max rDS(on) = 6.1 m? at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m? at VGS = 2.5 V, ID = 12 A MOSFET construction, the various components of gate charge Low Profile - 1 mm

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