All MOSFET. FDMC86520DC Datasheet

 

FDMC86520DC Datasheet and Replacement


   Type Designator: FDMC86520DC
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 17 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.6 nS
   Cossⓘ - Output Capacitance: 557 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0063 Ohm
   Package: PQFN3.3X3.3
 

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FDMC86520DC Datasheet (PDF)

 ..1. Size:277K  fairchild semi
fdmc86520dc.pdf pdf_icon

FDMC86520DC

September 2012FDMC86520DCN-Channel Dual CoolTM PowerTrench MOSFET 60 V, 40 A, 6.3 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced PowerTrench process. Max rDS(on) = 6.3 m at VGS = 10 V, ID = 17 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 8.7 m

 5.1. Size:269K  fairchild semi
fdmc86520l.pdf pdf_icon

FDMC86520DC

August 2011FDMC86520LN-Channel Power Trench MOSFET 60 V, 22 A, 7.9 mFeatures General Description Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 Aringing of DC/DC converters using either synchronous or Low P

 5.2. Size:858K  onsemi
fdmc86520l.pdf pdf_icon

FDMC86520DC

FDMC86520LN-Channel Power Trench MOSFET60 V, 22 A, 7.9 mGeneral DescriptionFeaturesThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 7.9 m at VGS = 10 V, ID = 13.5 A improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 Aconventional switchi

 7.1. Size:300K  fairchild semi
fdmc8651.pdf pdf_icon

FDMC86520DC

July 2008FDMC8651N-Channel Power Trench MOSFET 30 V, 20 A, 6.1 mFeatures General Description Max rDS(on) = 6.1 m at VGS = 4.5 V, ID = 15 A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 9.3 m at VGS = 2.5 V, ID = 12 AMOSFET construction, the various components of gate charge Low Profi

Datasheet: FCPF260N60E , FCU900N60Z , FDMC7208S , FDB9403F085 , FCP600N60Z , FCPF600N60Z , FDT1600N10ALZ , FDMC86012 , 10N60 , FDMS037N08B , FDP032N08B , FDB3632F085 , FDME430NT , FDMS8090 , FDP030N06BF102 , FDI9406F085 , FCH041N60F .

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