FDD770N15A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD770N15A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 18 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.1 nS

Cossⓘ - Capacitancia de salida: 64 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.077 Ohm

Encapsulados: TO252

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FDD770N15A datasheet

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FDD770N15A

November 2013 FDD770N15A N-Channel PowerTrench MOSFET 150 V, 18 A, 77 m Features Description RDS(on) = 61 m ( Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s advanced PowerTrench process that has been tai- Fast Switching Speed lored to minimize the on-state resistance while maintaining Low Gate Charge superior swi

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FDD770N15A

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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FDD770N15A

isc N-Channel MOSFET Transistor FDD770N15A FEATURES Static drain-source on-resistance RDS(on) 77m 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 150 V DSS V Gate-Source Voltage 20 V

Otros transistores... FDI9406F085, FCH041N60F, FDD10AN06F085, FDMC86260, FDMS86200DC, FDMS8333L, FDP023N08B, FCPF36N60N, 2SK3878, FDMS8820, FDMS8320LDC, HUF76639SF085, FDB38N30U, FDB070AN06F085, FDD1600N10ALZ, FCD380N60E, FCD900N60Z