FDD770N15A Todos los transistores

 

FDD770N15A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDD770N15A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 8.4 nC
   trⓘ - Tiempo de subida: 3.1 nS
   Cossⓘ - Capacitancia de salida: 64 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.077 Ohm
   Paquete / Cubierta: TO252

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FDD770N15A Datasheet (PDF)

 ..1. Size:633K  fairchild semi
fdd770n15a.pdf

FDD770N15A
FDD770N15A

November 2013FDD770N15AN-Channel PowerTrench MOSFET150 V, 18 A, 77 mFeatures Description RDS(on) = 61 m ( Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintaining Low Gate Chargesuperior swi

 ..2. Size:868K  onsemi
fdd770n15a.pdf

FDD770N15A
FDD770N15A

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:278K  inchange semiconductor
fdd770n15a.pdf

FDD770N15A
FDD770N15A

isc N-Channel MOSFET Transistor FDD770N15AFEATURESStatic drain-source on-resistance:RDS(on)77m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-Source Voltage 20 V

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