FDD770N15A Datasheet and Replacement

November 2013FDD770N15AN-Channel PowerTrench MOSFET150 V, 18 A, 77 mFeatures Description RDS(on) = 61 m ( Typ.) @ VGS = 10 V, ID = 12 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors advanced PowerTrench process that has been tai- Fast Switching Speedlored to minimize the on-state resistance while maintaining Low Gate Chargesuperior swi

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel MOSFET Transistor FDD770N15AFEATURESStatic drain-source on-resistance:RDS(on)77m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 150 VDSSV Gate-Source Voltage 20 V