FDMS8820 Todos los transistores

 

FDMS8820 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS8820

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 28 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.7 nS

Cossⓘ - Capacitancia de salida: 1295 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: PQFN5X6

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FDMS8820 datasheet

 ..1. Size:282K  fairchild semi
fdms8820.pdf pdf_icon

FDMS8820

October 2014 FDMS8820 N-Channel PowerTrench MOSFET 30 V, 116 A, 2.0 m Features General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 A ringing of DC/DC converters using either synchronous or Advanced Pac

 ..2. Size:403K  onsemi
fdms8820.pdf pdf_icon

FDMS8820

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:230K  fairchild semi
fdms8848nz.pdf pdf_icon

FDMS8820

May 2009 FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 m Features General Description The FDMS8848NZ has been designed to minimize losses in Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22.8 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.1 m at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest

 8.2. Size:257K  fairchild semi
fdms8880.pdf pdf_icon

FDMS8820

October 2014 FDMS8880 N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.5 A The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 13.0 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowest

Otros transistores... FCH041N60F , FDD10AN06F085 , FDMC86260 , FDMS86200DC , FDMS8333L , FDP023N08B , FCPF36N60N , FDD770N15A , STP75NF75 , FDMS8320LDC , HUF76639SF085 , FDB38N30U , FDB070AN06F085 , FDD1600N10ALZ , FCD380N60E , FCD900N60Z , FCD600N60Z .

History: ISP75DP06LM | FDMS8333L | APQ4ESN50AF

 

 

 

 

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