FDMS8820. Аналоги и основные параметры
Наименование производителя: FDMS8820
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 28 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7.7 ns
Cossⓘ - Выходная емкость: 1295 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
Тип корпуса: PQFN5X6
Аналог (замена) для FDMS8820
- подборⓘ MOSFET транзистора по параметрам
FDMS8820 даташит
fdms8820.pdf
October 2014 FDMS8820 N-Channel PowerTrench MOSFET 30 V, 116 A, 2.0 m Features General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 A ringing of DC/DC converters using either synchronous or Advanced Pac
fdms8820.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdms8848nz.pdf
May 2009 FDMS8848NZ N-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 m Features General Description The FDMS8848NZ has been designed to minimize losses in Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22.8 A power conversion application. Advancements in both silicon and Max rDS(on) = 5.1 m at VGS = 4.5 V, ID = 17.5 A package technologies have been combined to offer the lowest
fdms8880.pdf
October 2014 FDMS8880 N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 m Features General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.5 A The FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 13.0 m at VGS = 4.5 V, ID = 10.9 A package technologies have been combined to offer the lowest
Другие MOSFET... FCH041N60F , FDD10AN06F085 , FDMC86260 , FDMS86200DC , FDMS8333L , FDP023N08B , FCPF36N60N , FDD770N15A , STP75NF75 , FDMS8320LDC , HUF76639SF085 , FDB38N30U , FDB070AN06F085 , FDD1600N10ALZ , FCD380N60E , FCD900N60Z , FCD600N60Z .
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Список транзисторов
Обновления
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