Справочник MOSFET. FDMS8820

 

FDMS8820 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: FDMS8820
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 28 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 7.7 ns
   Cossⓘ - Выходная емкость: 1295 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.002 Ohm
   Тип корпуса: PQFN5X6
     - подбор MOSFET транзистора по параметрам

 

FDMS8820 Datasheet (PDF)

 ..1. Size:282K  fairchild semi
fdms8820.pdfpdf_icon

FDMS8820

October 2014FDMS8820N-Channel PowerTrench MOSFET30 V, 116 A, 2.0 mFeatures General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 Aringing of DC/DC converters using either synchronous or Advanced Pac

 ..2. Size:403K  onsemi
fdms8820.pdfpdf_icon

FDMS8820

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.1. Size:230K  fairchild semi
fdms8848nz.pdfpdf_icon

FDMS8820

May 2009FDMS8848NZN-Channel PowerTrench MOSFET 40 V, 49 A, 3.1 mFeatures General DescriptionThe FDMS8848NZ has been designed to minimize losses in Max rDS(on) = 3.1 m at VGS = 10 V, ID = 22.8 Apower conversion application. Advancements in both silicon and Max rDS(on) = 5.1 m at VGS = 4.5 V, ID = 17.5 Apackage technologies have been combined to offer the lowest

 8.2. Size:257K  fairchild semi
fdms8880.pdfpdf_icon

FDMS8820

October 2014FDMS8880N-Channel PowerTrench MOSFET 30 V, 21 A, 8.5 mFeatures General Description Max rDS(on) = 8.5 m at VGS = 10 V, ID = 13.5 AThe FDMS8880 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 13.0 m at VGS = 4.5 V, ID = 10.9 Apackage technologies have been combined to offer the lowest

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CMPDM203NH | STB10NK60ZT4 | NCEAP016N10LL | BUK455-100B | SI7413DN | FDG6320C | SSF65R420S2

 

 
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