FDB38N30U Todos los transistores

 

FDB38N30U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDB38N30U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 313 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 56 nC
   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 470 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: TO263 D2PAK

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FDB38N30U Datasheet (PDF)

 ..1. Size:553K  fairchild semi
fdb38n30u.pdf

FDB38N30U
FDB38N30U

November 2013FDB38N30UN-Channel UniFETTM Ultra FRFETTM MOSFET300 V, 38 A, 120 mFeatures Description RDS(on) = 120 m (Max.) @ VGS = 10 V, ID = 19 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 56 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better s

 ..2. Size:660K  onsemi
fdb38n30u.pdf

FDB38N30U
FDB38N30U

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.1. Size:297K  fairchild semi
fdb3860.pdf

FDB38N30U
FDB38N30U

March 2009FDB3860N-Channel PowerTrench MOSFET 100 V, 30 A, 37 mFeatures General Description Max rDS(on) = 37 m at VGS = 10 V, ID = 5.9 A This N-Channel MOSFET is rugged gate version of Fairchild Semiconductors advanced Power Trench process. This part is High performance trench technology for extremely low rDS(on)tailored for low rDS(on) and low Qg figure of merit,

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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