HUF75631P3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HUF75631P3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 120 W
Tensión drenaje-fuente (Vds): 100 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 33 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 79 nC
Resistencia drenaje-fuente RDS(on): 0.04 Ohm
Empaquetado / Estuche: TO220AB
Búsqueda de reemplazo de MOSFET HUF75631P3
HUF75631P3 Datasheet (PDF)
2.1. huf75631sk8t.pdf 
Size:249K _update_mosfet
HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V 5 • Simulation Models 1 - Temperature Compensated PSPICE® and SABER™ 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol
2.2. huf75631s3st.pdf Size:200K _update_mosfet
HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) • Ultra Low On-Resistance GATE - rDS(ON) = 0.040Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice an
2.3. huf75631sk8.pdf Size:254K _fairchild_semi
HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH • Ultra Low On-Resistance - rDS(ON) = 0.039Ω, VGS = 10V 5 • Simulation Models 1 - Temperature Compensated PSPICE® and SABER™ 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol
2.4. huf75631s3s.pdf Size:202K _fairchild_semi
HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) Ultra Low On-Resistance GATE - rDS(ON) = 0.040?, VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice and SABER Therm
Otros transistores... HUF75344P3 , HUF75344S3S , HUF75345G3 , HUF75345P3 , HUF75345S3S , HUF75545P3 , HUF75545S3S , HUF75623P3 , IRFP260M , HUF75631SK8 , HUF75637P3 , HUF75637S3S , HUF75639G3 , HUF75639P3 , HUF75639S3S , HUF75645P3 , HUF75645S3S .
