HUF75631P3 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HUF75631P3  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 33 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TO220AB

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HUF75631P3 datasheet

 6.1. Size:254K  fairchild semi
 huf75631sk8.pdf pdf_icon

HUF75631P3

HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH Ultra Low On-Resistance - rDS(ON) = 0.039 , VGS = 10V 5 Simulation Models 1 - Temperature Compensated PSPICE and SABER 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

 6.2. Size:202K  fairchild semi
 huf75631s3s.pdf pdf_icon

HUF75631P3

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) Ultra Low On-Resistance GATE - rDS(ON) = 0.040 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice an

 6.3. Size:249K  fairchild semi
 huf75631sk8t.pdf pdf_icon

HUF75631P3

HUF75631SK8 Data Sheet December 2001 5.5A, 100V, 0.039 Ohm, N-Channel, UltraFET Power MOSFET Packaging JEDEC MS-012AA Features BRANDING DASH Ultra Low On-Resistance - rDS(ON) = 0.039 , VGS = 10V 5 Simulation Models 1 - Temperature Compensated PSPICE and SABER 2 Electrical Models 3 4 - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com Symbol

 6.4. Size:200K  fairchild semi
 huf75631s3st.pdf pdf_icon

HUF75631P3

HUF75631P3, HUF75631S3ST Data Sheet December 2001 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN (FLANGE) Ultra Low On-Resistance GATE - rDS(ON) = 0.040 , VGS = 10V GATE Simulation Models SOURCE - Temperature Compensated PSPICE and SABER Electrical Models DRAIN (FLANGE) - Spice an

MOSTRAR MÁS

Otros transistores... HUF75344P3, HUF75344S3S, HUF75345G3, HUF75345P3, HUF75345S3S, HUF75545P3, HUF75545S3S, HUF75623P3, AO4468, HUF75631SK8, HUF75637P3, HUF75637S3S, HUF75639G3, HUF75639P3, HUF75639S3S, HUF75645P3, HUF75645S3S