FDD1600N10ALZD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

FDD1600N10ALZD Datasheet (PDF)

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November 2013FDD1600N10ALZD BoostPak (N-Channel PowerTrench MOSFET + Diode)100 V, 6.8 A, 160 mFeatures Description RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semicon-ductors PowerTrench process that has been tailored to mini- RDS(on) = 175 m (Typ.) @ VGS = 5.0 V, ID = 2.1 Amize the on-state resistance whil

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January 2014FDD1600N10ALZN-Channel PowerTrench MOSFET100 V, 6.8 A, 160 mFeatures Description RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchld Semicon-ductors advanced PowerTrench process that has been tai- RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 Alored to minimize the on-state resistance and maintain s

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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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May 2002FDD16AN08A0N-Channel UltraFET Trench MOSFET75V, 50A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing