FDD1600N10ALZD - аналоги, параметры транзистора

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November 2013 FDD1600N10ALZD BoostPak (N-Channel PowerTrench MOSFET + Diode) 100 V, 6.8 A, 160 m Features Description RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchild Semicon- ductor s PowerTrench process that has been tailored to mini- RDS(on) = 175 m (Typ.) @ VGS = 5.0 V, ID = 2.1 A mize the on-state resistance whil

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January 2014 FDD1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 6.8 A, 160 m Features Description RDS(on) = 124 m (Typ.) @ VGS = 10 V, ID = 3.4 A This N-Channel MOSFET is produced using Fairchld Semicon- ductor s advanced PowerTrench process that has been tai- RDS(on) = 175 m (Typ.) @ VGS = 5 V, ID = 2.1 A lored to minimize the on-state resistance and maintain s

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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May 2002 FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16m Features Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 50A 42V Automotive Load Control Qg(tot) = 31nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Sing