FDMS3669S MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDMS3669S
   Código: 9ACF21CD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.7 V
   Qgⓘ - Carga de la puerta: 17 nC
   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 370 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: PQFN5X6

Búsqueda de reemplazo de MOSFET FDMS3669S

FDMS3669S Datasheet (PDF)

..1. Size:581K fairchild semi
fdms3669s.pdf

January 2013FDMS3669SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 10 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 14.5 m at VGS = 4.

7.1. Size:653K fairchild semi
fdms3660s.pdf

February 2015FDMS3660SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5

7.2. Size:582K fairchild semi
fdms3668s.pdf

December 2012FDMS3668SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5

7.3. Size:626K fairchild semi
fdms3664s.pdf

January 2015FDMS3664SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V

7.4. Size:246K fairchild semi
fdms3662.pdf

May 2009FDMS3662tmN-Channel Power Trench MOSFET 100V, 49A, 14.8mFeatures General Description Max rDS(on) = 14.8m at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Advanced Package and Silicon combination for low rDS(on)been especially tailored to minimize the on-state resistance and

7.5. Size:412K fairchild semi
fdms3660as.pdf

July 2013FDMS3660ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,

7.6. Size:693K onsemi
fdms3660s.pdf

FDMS3660SPowerTrench) Power StageAsymmetric Dual N-Channel MOSFETDescriptionThis device includes two specialized N-Channel MOSFETs in awww.onsemi.comdual PQFN package. The switch node has been internally connected toenable easy placement and routing of synchronous buck converters.The control MOSFET (Q1) and synchronous SyncFET (Q2) havebeen designed to provide optimal power ef

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