FDMS3669S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: FDMS3669S
Маркировка: 9ACF21CD
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 2.2 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.7 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 13 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 17 nC
trⓘ - Время нарастания: 3 ns
Cossⓘ - Выходная емкость: 370 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.01 Ohm
Тип корпуса: PQFN5X6
FDMS3669S Datasheet (PDF)
fdms3669s.pdf
January 2013FDMS3669SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 10 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 14.5 m at VGS = 4.
fdms3660s.pdf
February 2015FDMS3660SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5
fdms3668s.pdf
December 2012FDMS3668SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5
fdms3664s.pdf
January 2015FDMS3664SPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V
fdms3662.pdf
May 2009FDMS3662tmN-Channel Power Trench MOSFET 100V, 49A, 14.8mFeatures General Description Max rDS(on) = 14.8m at VGS = 10V, ID = 8.9A This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Advanced Package and Silicon combination for low rDS(on)been especially tailored to minimize the on-state resistance and
fdms3660as.pdf
July 2013FDMS3660ASPowerTrench Power StageAsymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally Max rDS(on) = 8 m at VGS = 10 V, ID = 13 Aconnected to enable easy placement and routing of synchronous Max rDS(on) = 11 m at VGS = 4.5 V,
fdms3660s.pdf
FDMS3660SPowerTrench) Power StageAsymmetric Dual N-Channel MOSFETDescriptionThis device includes two specialized N-Channel MOSFETs in awww.onsemi.comdual PQFN package. The switch node has been internally connected toenable easy placement and routing of synchronous buck converters.The control MOSFET (Q1) and synchronous SyncFET (Q2) havebeen designed to provide optimal power ef
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Список транзисторов
Обновления
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