FDD120AN15F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 2002 FDP120AN15A0 / FDD120AN15A0N-Channel PowerTrench MOSFET150V, 14A, 120mFeatures Applications rDS(ON) = 101m (Typ.), VGS = 10V, ID = 4A DC/DC Converters and Off-line UPS Qg(tot) = 11.2nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Volta

June 2013FDD120AN15A0_F085N-Channel Power Trench MOSFETD150V, 14A, 120m Features Typ rDS(on) = 90.5m at VGS = 10V, ID = 4A G Typ Qg(tot) = 11.3nC at VGS = 10V, ID = 4A UIS Capability RoHS CompliantS Qualified to AEC Q101Applications Forcurrentpackagedrawing,pleaserefertotheFairchildwebsiteatwww.fairchildsemi.com/packaging Automotive E

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD120AN15A0-F085DN-Channel Power Trench MOSFET 150V, 14A, 120mGFeatures Typ rDS(on) = 90.5m at VGS = 10V, ID = 4AS Typ Qg(tot) = 11.3nC at VGS = 10V, ID = 4A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V S

FDD120AN15A0www.VBsemi.twN-Channel 150 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses150 23 nC0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/ECDAPPLICATION