FDD120AN15F085 - описание и поиск аналогов

September 2002 FDP120AN15A0 / FDD120AN15A0 N-Channel PowerTrench MOSFET 150V, 14A, 120m Features Applications rDS(ON) = 101m (Typ.), VGS = 10V, ID = 4A DC/DC Converters and Off-line UPS Qg(tot) = 11.2nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Volta

June 2013 FDD120AN15A0_F085 N-Channel Power Trench MOSFET D 150V, 14A, 120m Features Typ rDS(on) = 90.5m at VGS = 10V, ID = 4A G Typ Qg(tot) = 11.3nC at VGS = 10V, ID = 4A UIS Capability RoHS Compliant S Qualified to AEC Q101 Applications For current package drawing, please refer to the Fairchild website at www.fairchildsemi.com/packaging Automotive E

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD120AN15A0-F085 D N-Channel Power Trench MOSFET 150V, 14A, 120m G Features Typ rDS(on) = 90.5m at VGS = 10V, ID = 4A S Typ Qg(tot) = 11.3nC at VGS = 10V, ID = 4A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alternator Primary Switch for 12V S

FDD120AN15A0 www.VBsemi.tw N-Channel 150 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.074 at VGS = 10 V 25.4 Extremely Low Qgd for Switching Losses 150 23 nC 0.077 at VGS = 8 V 22.5 100 % Rg Tested 100 % Avalanche Tested Compliant to RoHS Directive 2002/95/EC D APPLICATION