FCH104N60F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FCH104N60F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 37 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 24 nS
Cossⓘ - Capacitancia de salida: 135 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.104 Ohm
Encapsulados: TO247
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FCH104N60F datasheet
fch104n60f f085.pdf
November 2014 FCH104N60F_F085 N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 m D Features Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS Capability G Qualified to AEC Q101 G RoHS Compliant D TO-247 S S Description SuperFET II MOSFET is Fairchild Semiconductor s brand-new For current package dr
fch104n60f.pdf
December 2013 FCH104N60F N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 98 m charge balance technology for outstanding low on-resistance and lower gate charge performance. This techn
fch104n60f-f085.pdf
FCH104N60F-F085 N-Channel SuperFET II FRFET MOSFET 600 V, 37 A, 104 m D Features Typical RDS(on) = 91 m at VGS = 10 V, ID = 18.5 A Typical Qg(tot) = 109 nC at VGS = 10V, ID = 18.5 A UIS Capability G Qualified to AEC Q101 RoHS Compliant G D TO-247 S S Description SuperFET II MOSFET is ON Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family tha
fch104n60.pdf
June 2014 FCH104N60 N-Channel SuperFET II MOSFET 600 V, 37 A, 104 m Features Description 650 V @ TJ = 150 C SuperFET II MOSFET is Fairchild Semiconductor s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing Typ. RDS(on) = 96 m charge balance technology for outstanding low on-resistance Ultra Low Gate Charge (Typ. Qg = 63 nC) and lower
Otros transistores... FDN537N , FDB9406F085 , FDD120AN15F085 , FDPC4044 , FDMC8360L , FDMC86340 , FDMC86570L , FDN371N , TK10A60D , FDMS86350 , FDU6N25 , HUF76419SF085 , FDMS86252L , FDMS86550 , FDMA908PZ , FDS6679 , FCD620N60ZF .
History: 7N80F | SMK0170I
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