FDB42AN15F085 Todos los transistores

 

FDB42AN15F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDB42AN15F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 216 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.042 Ohm
   Paquete / Cubierta: TO263 D2PAK
     - Selección de transistores por parámetros

 

FDB42AN15F085 Datasheet (PDF)

 5.1. Size:255K  fairchild semi
 fdb42an15a0.pdf pdf_icon

FDB42AN15F085

September 2002FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench MOSFET150V, 35A, 42mFeatures Applications rDS(ON) = 36m (Typ.), VGS = 10V, ID = 12A DC/DC Converters and Off-line UPS Qg(tot) = 33nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Sy

 5.2. Size:258K  fairchild semi
 fdp42an15a0 fdb42an15a0.pdf pdf_icon

FDB42AN15F085

September 2002FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench MOSFET150V, 35A, 42mFeatures Applications rDS(ON) = 36m (Typ.), VGS = 10V, ID = 12A DC/DC Converters and Off-line UPS Qg(tot) = 33nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Sy

 5.3. Size:344K  fairchild semi
 fdb42an15 f085.pdf pdf_icon

FDB42AN15F085

June 2013FDB42AN15A0_F085N-Channel Power Trench MOSFET150V, 35A, 42mDDFeatures Typ rDS(on) = 30m at VGS = 10V, ID = 12A Typ Qg(tot) = 78nC at VGS = 10V, ID = 12AG UIS Capability RoHS CompliantGS Qualified to AEC Q101TO-263SApplications FDB SERIES Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alt

 5.4. Size:277K  inchange semiconductor
 fdb42an15a0.pdf pdf_icon

FDB42AN15F085

isc N-Channel MOSFET Transistor FDB42AN15A0FEATURESWith TO-263 packagingDrain Source Voltage-: V 150VDSSStatic drain-source on-resistance:RDS(on) 42m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: APM2317AC | HGM120N06SL | AM70N15-40P | HFB1N60S | STS65R190SS2 | SFP028N100C3 | VNT009A

 

 
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