FDB42AN15F085 Todos los transistores

 5.1. Size:255K  fairchild semi
 fdb42an15a0.pdf

September 2002 FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench MOSFET 150V, 35A, 42m Features Applications rDS(ON) = 36m (Typ.), VGS = 10V, ID = 12A DC/DC Converters and Off-line UPS Qg(tot) = 33nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Sy

 5.2. Size:258K  fairchild semi
 fdp42an15a0 fdb42an15a0.pdf

September 2002 FDP42AN15A0 / FDB42AN15A0 N-Channel PowerTrench MOSFET 150V, 35A, 42m Features Applications rDS(ON) = 36m (Typ.), VGS = 10V, ID = 12A DC/DC Converters and Off-line UPS Qg(tot) = 33nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low Qrr Body Diode High Voltage Sy

 5.3. Size:344K  fairchild semi
 fdb42an15 f085.pdf

June 2013 FDB42AN15A0_F085 N-Channel Power Trench MOSFET 150V, 35A, 42m D D Features Typ rDS(on) = 30m at VGS = 10V, ID = 12A Typ Qg(tot) = 78nC at VGS = 10V, ID = 12A G UIS Capability RoHS Compliant G S Qualified to AEC Q101 TO-263 S Applications FDB SERIES Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Integrated Starter/alt

 5.4. Size:277K  inchange semiconductor
 fdb42an15a0.pdf

isc N-Channel MOSFET Transistor FDB42AN15A0 FEATURES With TO-263 packaging Drain Source Voltage- V 150V DSS Static drain-source on-resistance RDS(on) 42m @V =10V GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25